Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Parkin, S. S. P.; Kaiser, Christian; Panchula, Alex; Rice, Philip M.; Hughes, Brian; Samant, Mahesh G.; Yang, See‐Hun

doi:10.1038/nmat1256

Cited by 2,992 publications

(1,792 citation statements)

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“…These junctions exhibited a TMR of a up to 8 % at room temperature and were used for further experiments. (Giant TMR values at room temperature [2,82] result from a symmetrydependent filtering of electrons which is found in MgO(001) barriers in combination with bcc-ordered electrodes [83].) The other MTJs had clearly different resistances or a shorted pillar and did not 6.2 TMR measurements of Fe/MgO/Ni/Cu(100) tunnel junctions show a TMR effect at all.…”

Section: Magnetoresistance Curves Of Fe/mgo/ni/cu(100) Tunnel Junctionsmentioning

confidence: 99%

Magnetoelectric coupling at metal surfaces

et al. 2010

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Section: Magnetoresistance Curves Of Fe/mgo/ni/cu(100) Tunnel Junctionsmentioning

confidence: 99%

Magnetoelectric coupling at metal surfaces

et al. 2010

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“…Giant magnetoresistance (GMR) [1,2] and tunnel magnetoresistance (TMR) [3][4][5][6][7][8] effects are representative phenomena utilizing the spin-dependent scattering of carriers.…”

Section: Introductionmentioning

confidence: 99%

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions

Kobayashi¹,

Nakashima²,

Takeichi³

et al. 2017

Proc. Asia-Pacific Conf. On Semiconducting Silicides and Related Materials 2016

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Fe/B-doped carbon/Fe3Si trilayered films were prepared on Si(111) substrates by physical vapor deposition with a mask method, and the film-structures and magnetic properties of the films were investigated. The Fe3Si and Fe layers were deposited by facing targets direct-current sputtering (FTDCS), and the B-doped carbon layers were deposited by coaxial arc plasma deposition (CAPD) with B-blended graphite targets. Here, since the B-doped carbon layers were deposited by CAPD in the same manner as the deposition of B-doped ultrananocrystalline diamond/hydrogenated amorphous carbon composite (UNCD/a-C:H) films, the interlayers should be B-doped UNCD/a-C:H. The formation of a layered structure was confirmed by transmission electron microscopy (TEM). The diffusion of Fe and Si atoms into the interlayer occurs in the range of several nanometers. The shape of the magnetization curve has clear steps that evidently indicate the formation of antiparallel alignment of magnetizations owing to the difference in the coercive forces between the top Fe and bottom Fe3Si layers. It was experimentally demonstrated that B-doped UNCD/a-C:H is applicable to Fe-Si system spin valves as interlayer materials.

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“…An important device merit is the TMR ratio and much theoretical and experimental efforts have been devoted to create MTJs with different ferromagnetic metals and insulating materials in order to generate a large ratio. While materials such as MgO and Al 2 O 3 are the most popular barrier materials in practical MTJs, [16][17][18][19][20] 2D materials graphene 21,22 and transition-metal dichalcogenides 23,24 have also been investigated in this context.…”

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confidence: 99%

Nonequilibrium spin injection in monolayer black phosphorus

Chen

Wang

et al. 2016

Phys. Chem. Chem. Phys.

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Monolayer black phosphorus (MBP) is an interesting emerging electronic material with a direct band gap and relatively high carrier mobility. In this work we report a theoretical investigation of nonequilibrium spin injection and spin-polarized quantum transport in MBP from ferromagnetic Ni contacts, in two-dimensional magnetic tunneling structures. We investigate physical properties of the spin injection efficiency, the tunnel magnetoresistance ratio, spin-polarized currents, charge currents and transmission coefficients as a function of external bias voltage, for two different device contact structures where MBP is contacted by Ni(111) and by Ni(100). While both structures are predicted to give respectable spin-polarized quantum transport, the Ni(100)/MBP/Ni(100) trilayer has the superior property where the spin injection and magnetoresistance ratio maintains almost a constant value against the bias voltage. The nonequilibrium quantum transport phenomenon is understood by analyzing the transmission spectrum at nonequilibrium. PACS numbers: 72.25.Mk, 73.43.Qt Two dimensional (2D) materials have received extensive investigations in recent years for possible applications in logic devices, photonic systems, solar cells, transparent substrates and perhaps most interestingly, flexible and wearable consumer electronics. 1 The thin layer of 2D material makes it a natural choice for producing flexible structures due to their out of plane flexibility. Many 2D materials have strong covalent bonds and diverse electronic structures -properties which are needed for reliable and durable applications.So far, several 2D materials have been fabricated successfully including the celebrated graphene, 2-5 various 2D transition-metal dichalcogenides, 6-8 and the monolayer black phosphorus (MBP). [9][10][11][12][13] In particular, as one of the newest members of 2D material family, MBP is very interesting in several aspects. First, different from transition-metal dichalcogenides, black phosphorus is made of a single atomic specie, phosphorus. Second, different from graphene, the phosphorus atoms in MBP are not all located in a plane but form a buckled hexagonal structure by covalence bonds and few-layer black phosphorus has an ideal direct bandgap, a property that is very important for optoelectronics. Third, MBP has an intrinsic band gap and graphene does not. Though lower than that of graphene, few-layer black phosphorus has respectable mobilities of ∼ 1000cm 2 V −1 s −1 as reported experimentally. 9 While the materials properties make MBP very interesting and potentially important for emerging flexible electronics, another critical issue is to achieve low power operation. In this regard, one notes that the energy scale of spin dynamics is typically many orders of magnitude smaller than that of charge dynamics, and low power electronics operation can thus be achieved in spintronics devices whose operation principle is based on spin dynamics. 14,15 Existing and well studied spintronic systems include magnetic random access memory...

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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Cited by 2,992 publications

References 31 publications

Magnetoelectric coupling at metal surfaces

Magnetoelectric coupling at metal surfaces

Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions

Nonequilibrium spin injection in monolayer black phosphorus

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Giant tunnelling magnetoresistance at room temperature with MgO (100) tunnel barriers

Cited by 2,992 publications

References 31 publications

Magnetoelectric coupling at metal surfaces

Magnetoelectric coupling at metal surfaces

Film structures of Fe/B-doped carbon/Fe3Si spin valve junctions

Nonequilibrium spin injection in monolayer black phosphorus

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Film structures of Fe/B-doped carbon/Fe₃Si spin valve junctions