Abstract:Magnetic multilayer devices that exploit magnetoresistance are the backbone of magnetic sensing and data storage technologies. Here, we report multiple-spin-filter magnetic tunnel junctions (sf-MTJs) based on van der Waals (vdW) heterostructures in which atomically thin chromium triiodide (CrI) acts as a spin-filter tunnel barrier sandwiched between graphene contacts. We demonstrate tunneling magnetoresistance that is drastically enhanced with increasing CrI layer thickness, reaching a record 19,000% for magne… Show more
“…In fact, “vdW‐MTJs” have been successfully fabricated, an example of which is based on a graphite/CrI 3 /graphite sandwich structure that possesses a large tunneling magnetoresistance . Figure A shows a schematic of such vdW‐MTJ with bilayer CrI 3 functioning as a spin‐filter . The magnetic‐field‐dependent tunneling current at a selected bias voltage and RMCD signal are shown in Figure B, from which a double spin filter effect is evident: in the antiparallel spin states at low field, the current is small because of suppressed spin‐conserving tunneling of an electron through the adjacent layers .…”
Section: Progress On Van Der Waals Magnets and Heterostructuresmentioning
confidence: 99%
“…Heterostructures and devices based on 2D‐vdW magnets are expected to possess a great variety of properties with strong application potential. Notable examples include the giant magnetoresistance and spin‐filtering phenomena in 2D spin‐valves and tunnel junctions …”
The unprecedented realization of two‐dimensional (2D) van der Waals magnets excitingly extends the synergy between spintronics and 2D materials, started with graphene over the last decade. This article reviews the recent milestones in the development of 2D magnets and its derived heterostructures. In particular, a number of critical challenges centered around the scalability, ambient stability and Curie temperature of these atomically thin magnets are discussed. This mini‐review also provides an outlook on what the future might hold for this integrated field of 2D spintronics, and assesses its potential in postsilicon electronics.
“…In fact, “vdW‐MTJs” have been successfully fabricated, an example of which is based on a graphite/CrI 3 /graphite sandwich structure that possesses a large tunneling magnetoresistance . Figure A shows a schematic of such vdW‐MTJ with bilayer CrI 3 functioning as a spin‐filter . The magnetic‐field‐dependent tunneling current at a selected bias voltage and RMCD signal are shown in Figure B, from which a double spin filter effect is evident: in the antiparallel spin states at low field, the current is small because of suppressed spin‐conserving tunneling of an electron through the adjacent layers .…”
Section: Progress On Van Der Waals Magnets and Heterostructuresmentioning
confidence: 99%
“…Heterostructures and devices based on 2D‐vdW magnets are expected to possess a great variety of properties with strong application potential. Notable examples include the giant magnetoresistance and spin‐filtering phenomena in 2D spin‐valves and tunnel junctions …”
The unprecedented realization of two‐dimensional (2D) van der Waals magnets excitingly extends the synergy between spintronics and 2D materials, started with graphene over the last decade. This article reviews the recent milestones in the development of 2D magnets and its derived heterostructures. In particular, a number of critical challenges centered around the scalability, ambient stability and Curie temperature of these atomically thin magnets are discussed. This mini‐review also provides an outlook on what the future might hold for this integrated field of 2D spintronics, and assesses its potential in postsilicon electronics.
“…Pleasantly, spinfilter MTJs (sf-MTJs) based on different layers of CrI 3 with giant TMR were demonstrated by Song et al [81] Thin graphene flakes were placed on the top and bottom of CrI 3 , and the structure contains h-BN flakes to avoid the degradation (Figure 14a). Pleasantly, spinfilter MTJs (sf-MTJs) based on different layers of CrI 3 with giant TMR were demonstrated by Song et al [81] Thin graphene flakes were placed on the top and bottom of CrI 3 , and the structure contains h-BN flakes to avoid the degradation (Figure 14a).…”
Section: Cri 3 -Based Spin-filter Mtj With Giant Tmrmentioning
confidence: 99%
“…They adopted scalable techniques, which did not require the transfer of h-BN flakes. [81] Copyright 2016, AAAS. The CVD-grown h-BN possessed many grain boundaries (GBs) that provided thin defective paths for the formation of filaments and the GBs per cell are controllable by tuning CVD growth parameter.…”
With the rapid development of the information age, more and more new technologies such as big data and cloud computing are beginning to emerge. As a result, the demand for high data‐storage density is becoming more and more urgent. In the past 10 years, data‐storage density has been greatly improved by reducing the size of memory cells. However, as semiconductor technology nodes have shrunk, a number of problems have appeared in metal–oxide–semiconductor field‐effect transistor (MOSFET)‐based memory cells, such as gate‐induced drain leakage, drain‐induced barrier lowering, and reliability issues. Fortunately, due to their atomic thickness, high mobility, and sustainable miniaturization properties, 2D atomic crystals (2D materials) are considered the most promising substitute for silicon to solve those issues. This review investigates the use of 2D materials in nonvolatile and volatile memories, including MOSFET‐based memory, magnetic random‐access memory, resistive random‐access memory, dynamic random‐access memory, semi‐floating‐gate memory, and other novel memories.
“…According to the Mermin–Wagner theorem,18 2D long‐range FM order cannot exist in an isotropic magnetic system. Recently, people found that 2D layered CrI 3 ,19–27 Cr 2 Ge 2 Te 6 ,28 and CrSiTe 3 29 possesses intrinsic magnetocrystalline anisotropy against thermal fluctuations. However, the Curie temperatures of CrI 3 , Cr 2 Ge 2 Te 6 , and CrSiTe 3 are only dozens of Kelvins.…”
Emerging research in 2D materials has promoted the development of nanoelectronics. Ferromagnetic van der Waals (vdW) layered materials can be utilized to implement ultrathin spintronic devices with new functionalities. The theoretical investigation of 2D vdW scattering spin filters and magnetic tunnel junctions consisting of atomically thin Fe3GeTe2 (FGT) are reported. By the nonequilibrium Green's function technique, the spin polarization of ballistic transport through single‐/double‐layer FGT sandwiched between two Cu electrodes is predicted to be 53/85%. In ultrathin FGT‐hBN‐FGT heterostructures, remarkable magnetoresistance is observed, in which maximum (minimum) resistance occurs when the magnetization of two FGT layers is parallel (antiparallel) to each other. For heterostructures consisting of single‐/double‐layer FGT, the magnetoresistance reaches 183/252% at zero‐bias limit. The parallel state of a FGT magnetic tunnel junction exhibits spin polarization larger than 75%. These results suggest the application of magnetic vdW layered materials in ultrathin spintronics.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.