Giant tunnel electroresistance in two-dimensional ferroelectric tunnel junctions constructed with a 
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>Sc</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>CO</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:msub><mml:mi>In</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Se</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
 van der Waals ferroelectric heterostructure

Xie, Aijie; Hao, Hua; Liu, Chunsheng; Zheng, Xiaohong; Zhang, Lei; Zhang, Zhi

doi:10.1103/physrevb.107.115427

Cited by 24 publications

(7 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…High on/off ratio enables more efficient switching and lower power consumption, which is key to devices for high-performance applications. , To confirm the ultrahigh on/off ratio of the device, the tunnel electroresistance ratio (TER) is also estimated by calculating the tunnel equilibrium conductance; the calculated method is shown in the last of Supporting Information. The calculated TER is around 3.03 × 10 7 %, which is the same order of magnitude as the on/off ratio and much larger than previously reported TER for tunnel junctions composed of 2D FE materials. , …”

Section: Resultssupporting

confidence: 52%

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Chen,

Wang,

Guo

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

To overcome the volatility and high-power dissipation in conventional control approaches in spin-dependent devices, such as spin memory devices, there is an urgent need to realize nonvolatile all-electric spin manipulation in two-dimensional van der Waals (vdW) ferromagnetic (FM) semiconductors. Herein, we investigate the electronic and transport features of the multiferroic heterostructure (HS) RuCl 2 /Al 2 S 3 built by coupling the ferrovalley semiconductor RuCl 2 monolayer with the ferroelectric (FE) Al 2 S 3 monolayer by employing first-principles density functional theory plus nonequilibrium Green's function transport theory. It is shown that the nonvolatile and reversible switching between the FM semiconductor and half-metallicity can be realized in the RuCl 2 /Al 2 S 3 HS by electrically controlling the FE polarization states of the Al 2 S 3 sublayer. Moreover, the large out-of-plane magnetic anisotropy and Curie temperature near room temperature of RuCl 2 can also survive in the vdW RuCl 2 /Al 2 S 3 HS, which is of practical importance. Notably, the FE sublayer Al 2 S 3 still retains its original semiconducting nature in different polarization states, which is beneficial to realize the polarization switching via an applied electric field. Furthermore, an all-electric controlled valve effect with an ultrahigh on/off ratio and pure spin-polarized current in the on state is confirmed in conceptual two-probe devices based on the RuCl 2 /Al 2 S 3 HS. These findings shed light on the potential applications of the all-electrically controlled vdW multiferroic HS RuCl 2 /Al 2 S 3 in compact and highly efficient information processing and data storage.

show abstract

Section: Resultssupporting

confidence: 52%

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Chen,

Wang,

Guo

et al. 2024

ACS Appl. Nano Mater.

View full text Add to dashboard Cite

show abstract

“…55 Whether the electron transfer occurs or not depends on whether the relationship E g1 < Δ W holds or not, where E g1 is the band gap of the contacted material surface with a lower work function. 56 When the surface of α-In 2 Se 3 with W l is contacted with MoTe 2 , namely, when the polarization direction points up, Δ W = 0.72 eV, which is smaller than the energy gap (1.36 eV) of the lower work function side material α-In 2 Se 3 . Thus, charge transfer does not occur between the two materials and thus they are both still insulators (see Fig.…”

Section: Resultsmentioning

confidence: 95%

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures

Lei,

Zhou,

Zheng

et al. 2024

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

show abstract

“…Zheng et al designed a FTJ composed of a Sc 2 CO 2 /In 2 Se 3 vdW heterostructure based on two different 2D ferroelectric materials with out-of-plane polarization. 268 Through density functional calculations, they find that the TER ratio can be as high as 10 7 %. This high TER ratio is attributed to the difference in work functions between the contact surfaces of the two ferroelectric materials, which leads to a metal−insulator switching of the vdW heterostructure.…”

Section: The Fundamental Of Ferroelectric Devicesmentioning

confidence: 99%

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Liu,

Cui,

Bian

et al. 2024

ACS Nano

View full text Add to dashboard Cite

In recent years, there has been growing interest in functional devices based on two-dimensional (2D) materials, which possess exotic physical properties. With an ultrathin thickness, the optoelectrical and electrical properties of 2D materials can be effectively tuned by an external field, which has stimulated considerable scientific activities. Ferroelectric fields with a nonvolatile and electrically switchable feature have exhibited enormous potential in controlling the electronic and optoelectronic properties of 2D materials, leading to an extremely fertile area of research. Here, we review the 2D materials and relevant devices integrated with ferroelectricity. This review starts to introduce the background about the concerned themes, namely 2D materials and ferroelectrics, and then presents the fundamental mechanisms, tuning strategies, as well as recent progress of the ferroelectric effect on the optical and electrical properties of 2D materials. Subsequently, the latest developments of 2D material-based electronic and optoelectronic devices integrated with ferroelectricity are summarized. Finally, the future outlook and challenges of this exciting field are suggested.

show abstract

Giant tunnel electroresistance in two-dimensional ferroelectric tunnel junctions constructed with a Sc2CO2/In2Se3 van der Waals ferroelectric heterostructure

Cited by 24 publications

References 43 publications

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Contact Info

Product

Resources

About

Giant tunnel electroresistance in two-dimensional ferroelectric tunnel junctions constructed with a Sc2CO2/In2Se3 van der Waals ferroelectric heterostructure

Cited by 24 publications

References 43 publications

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl2/Al2S3 Heterostructures: Implications for Spin Memory Devices

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl2/Al2S3 Heterostructures: Implications for Spin Memory Devices

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In2Se3/MoTe2 van der Waals heterostructures

The Integration of Two-Dimensional Materials and Ferroelectrics for Device Applications

Contact Info

Product

Resources

About

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

Density Functional Theory Study of Nonvolatile Electrical Control of Half-Metallicity in Multiferroic RuCl₂/Al₂S₃ Heterostructures: Implications for Spin Memory Devices

High tunneling electroresistance in ferroelectric tunnel junctions based on two-dimensional α-In₂Se₃/MoTe₂ van der Waals heterostructures