Giant tunable Rashba spin splitting in a two-dimensional BiSb monolayer and in BiSb/AlN heterostructures

Singh, Sobhit; Romero, Aldo H.

doi:10.1103/physrevb.95.165444

Cited by 149 publications

(134 citation statements)

References 71 publications

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“…As shown in Figure c, no imaginary frequency is observed in the phonon spectra, indicating that their atomic structures are dynamically stable . Furthermore, AIMD simulations also show their high stability that atomic structures do not spontaneously reshape during the simulations at room temperature and even up to 1000 K . In addition, using first‐principles cluster‐expansion method in combination with canonical Monte Carlo simulation further confirms the good phase stability of SbAs monolayer under various temperatures .…”

Section: Theoretical Design Of 2d V‐v Binary Materialsmentioning

confidence: 64%

2D V‐V Binary Materials: Status and Challenges

et al. 2019

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The ORCID identification number(s) for the author(s) of this article can be found under https://doi.org/10.1002/adma.201902352. 2D phosphorene, arsenene, antimonene, and bismuthene, as a fast-growing family of 2D monoelemental materials, have attracted enormous interest in the scientific community owing to their intriguing structures and extraordinary electronic properties. Tuning the monoelemental crystals into bielemental ones between group-VA elements is able to preserve their advantages of unique structures, modulate their properties, and further expand their multifunctional applications. Herein, a review of the historical work is provided for both theoretical predictions and experimental advances of 2D V-V binary materials. Their various intriguing electronic properties are discussed, including band structure, carrier mobility, Rashba effect, and topological state. An emphasis is also given to their progress in fabricated approaches and potential applications. Finally, a detailed presentation on the opportunities and challenges in the future development of 2D V-V binary materials is given.

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Section: Theoretical Design Of 2d V‐v Binary Materialsmentioning

confidence: 64%

2D V‐V Binary Materials: Status and Challenges

et al. 2019

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“…Here, we introduced a convenient dimensionless SOI constant

\overset{false˜}{α} = α / e a_{B}^{2}

, with the Bohr radius in the material

a_{B} = ϵ ℏ^{2} / m e^{2}

. The BEPs appear as soon as

\overset{false˜}{α} > d / 4 a_{B}

, which is attainable in materials such as

{Bi}_{2} {Se}_{3}

BiTeI

, or

BiSb

monolayers, for which

\overset{false˜}{α}

is of the order of unity . From now on, the energy with a tilde is given in

2 Ry

units, with the Rydberg constant in the material being

Ry = ℏ^{2} / 2 m a_{B}^{2}

.…”

mentioning

confidence: 99%

Bound Electron Pairs Formed by the Spin–Orbit Interaction in 2D Gated Structures

Gindikin

Vigdorchik

Sablikov

2020

Physica Rapid Research Ltrs

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The bound electron pairs (BEPs) arising due to the pair spin–orbit interaction (PSOI) in 2D structures are explored with a gate that allows the BEPs to be manipulated. The gate breaks the in‐plane reflection symmetry of the pair Coulomb field and creates a one‐particle Rashba spin–orbit interaction. It is found that the normal component of the electric field substantially affects the BEPs but the key role in forming the BEPs belongs to the in‐plane component. The ground state of a BEP with zero total momentum, which is doubly degenerate in the absence of the gate, splits into two states. One of them is tunable by varying the gate voltage, whereas the other is on the contrary robust. The tunable BEP has a higher binding energy which grows as the gate voltage increases, with its orbital and spin structure changing continuously. At large negative voltage, the tunable BEP decays. The orbital and spin structure of the robust BEP does not depend on the gate voltage. Its energy level crosses the conduction band bottom at high gate voltage of any polarity, but the robust BEP remains bound and localized even when in continuum.

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“…In this work, we study the BEC-BCS in a two-dimensional (2D) electron gas with low carrier density, realized in a 2D heterostructure with structural inversion asymmetry, and the ensuing Rashba spin-orbit coupling. Systems with similar conditions have been previously reported [8][9][10][11][12][13] .…”

Section: Introductionmentioning

confidence: 76%

Superfluid-insulator transition and the BEC-BCS crossover in the Rashba moat band

2019

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We study the superconducting transition in a two-dimensional electron gas with strong Rashba spin-orbit coupling. We assume low electron density, such that only the majority spin band participates in the transition. We show that the superconducting transition follows either the Bose-Einstein condensation (BEC), or the Bardeen-Cooper-Schrieffer (BCS) scenarios, depending on the position of the chemical potential with respect to the bottom of the majority band, and the strength of the Coulomb repulsion between electrons. Hence, the BEC-BCS crossover in this system can be driven either by the change in the chemical potential, or the distance to a gate. arXiv:1812.06998v2 [cond-mat.supr-con]

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Giant tunable Rashba spin splitting in a two-dimensional BiSb monolayer and in BiSb/AlN heterostructures

Cited by 149 publications

References 71 publications

2D V‐V Binary Materials: Status and Challenges

2D V‐V Binary Materials: Status and Challenges

Bound Electron Pairs Formed by the Spin–Orbit Interaction in 2D Gated Structures

Superfluid-insulator transition and the BEC-BCS crossover in the Rashba moat band

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