We investigated the temperature dependence of the switching current for a perpendicularly magnetized CoFeB film deposited on a nanocrystalline tungsten film with large oxygen content: nc-W(O). The spin Hall angle |Θ SH | ≈ 0.22 is independent of temperature, whereas the switching current increases strongly at low temperature. We show that the nc-W(O) is insensitive to annealing. It thus can be a good choice for the integration of spin Hall driven writing of information in magnetic memory or logic devices that require a high-temperature annealing process during fabrication.The ability of spin-orbit torques, and in particular of the spin Hall effect 1-3 (SHE), to generate pure spin currents that can be used to manipulate the magnetization of an ultrathin magnetic film has triggered very active research of the spintronics community on this novel field. The spin current generated through the SHE in a heavy metal film exerts a spin transfer torque (STT) on an adjacent magnetic film which can be strong enough to excite ferromagnetic resonance dynamics and even magnetization reversal. 4 The pivotal quantity of the SHE is the spin Hall angle Θ SH = j s /j c describing the ratio of the spin current j s and the orthogonal charge current j c . After initial successful demonstrations of current-induced magnetization switching in perpendicularly magnetized Ta / CoFeB (Θ SH = −0.12) and Pt / Co (Θ SH = 0.07) film stacks, 5-7 a search for materials with larger spin Hall angles started. Being a spin-orbit interaction derived effect, it is expected to be largest in heavy metals or lighter metals with heavy metal impurities. 8,9 The highest values for a metal were observed for β-W with the A15 structure;