Giant reversible nanoscale piezoresistance at room temperature in Sr<sub>2</sub>IrO<sub>4</sub> thin films

Domingo, Neus; López-Mir, Laura; Paradinas, Markos; Holý, V.; Železný, Jakuv; Yi, Di; Suresha, S. J.; Liu, Jian; Serrao, Claudy Rayan; Ramesh, R.; Ocal, Carmen; Martí, X.; Catalán, Gustau

doi:10.1039/c4nr06954d

Cited by 25 publications

(22 citation statements)

References 34 publications

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“…The piezoresistance coefficient of BCCTs is nonlinear, where the conductivity change reaches −0.99% under a strain of 0.98% . Under a low strain, the piezoresistance coefficient is −5.7 × 10 −7 Pa −1 , and it increases to −5.1 × 10 −6 Pa −1 under a high strain, which is significantly higher than that of the reported giant piezoresistance nanowires, and comparable to that of Sr 2 IO 4 thin film, making the emergence of BCCTs as a new generation of giant piezoresistance organic CT materials. The influence of repetitive strain on the piezoresistance properties is examined by cyclic loading and unloading of strain as shown in Figure i.…”

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confidence: 70%

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

Chakraborty

Remsing

et al. 2016

Advanced Materials

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Magnetic-energy harvesting in a centimeter-sized free-standing (BEDT-TTF)C charge-transfer single crystal is demonstrated. The crystal shows sensitive magnetic-, thermal-, and mechanical-sensing ability, with an excellent piezoresistance coefficient of -5.1 × 10 Pa . The self-powered sensing performance, together with its solution processability and flexibility, endow it with the capability of driving a new generation of noncontact magnetic-energy harvesting and sensing technologies.

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confidence: 70%

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

Chakraborty

Remsing

et al. 2016

Advanced Materials

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“…The PVDF‐BCCTs show a low piezoresistance coefficient of −2.99 × 10 −6 Pa −1 under low strain and a high piezoresistance coefficient of −7.89 × 10 −6 Pa −1 under high strain. The piezoresistance coefficient of PVDF‐BCCTs is much higher than that of Si nanowires, and close to the coefficient of Sr 2 IO 4 thin film, enabling the PVDF‐BCCTs to demonstrate superior pressure sensing ability. To demonstrate the repetition and reversible strain response of PVDF‐BCCTs, the resistance change under the cyclic strain change is shown in Figure c.…”

Section: Resultsmentioning

confidence: 87%

Integrated Charge Transfer in Organic Ferroelectrics for Flexible Multisensing Materials

Ren

2016

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The ultimate or end point of functional materials development is the realization of strong coupling between all energy regimes (optical, electronic, magnetic, and elastic), enabling the same material to be utilized for multifunctionalities. However, the integration of multifunctionalities in soft materials with the existence of various coupling is still in its early stage. Here, the coupling between ferroelectricity and charge transfer by combining bis(ethylenedithio)tetrathiafulvalene-C60 charge-transfer crystals with ferroelectric polyvinylidene fluoride polymer matrix is reported, which enables external stimuli-controlled polarization, optoelectronic and magnetic field sensing properties. Such flexible composite films also display a superior strain-dependent capacitance and resistance change with a giant piezoresistance coefficient of 7.89 × 10(-6) Pa(-1) . This mutual coupled material with the realization of enhanced couplings across these energy domains opens up the potential for multisensing applications.

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“…Achieving controlled local high pressures with AFM is technically remarkably simple . Typical commercial diamond AFM tip radii are in the range of 10–100 nm.…”

Section: Resultsmentioning

confidence: 99%

Tunable Graphene Electronics with Local Ultrahigh Pressure

Ares

Pisarra

Segovia

et al. 2019

Adv Funct Materials

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Fine-tuning of graphene effective doping is achieved by applying ultrahigh pressures (>10 GPa) using atomic force microscopy (AFM) diamond tips. Specific areas in graphene flakes are irreversibly flattened against a SiO 2 substrate. This work represents the first demonstration of local creation of very stable effective p-doped graphene regions with nanometer precision, as unambiguously verified by a battery of techniques. Importantly, the doping strength depends monotonically on the applied pressure, allowing a controlled tuning of graphene electronics. Through this doping effect, ultrahigh pressure modifications include the possibility of selectively modifying graphene areas to improve their electrical contact with metal electrodes, as shown by conductive AFM. Density functional theory calculations and experimental data suggest that this pressure level induces the onset of covalent bonding between graphene and the underlying SiO 2 substrate. This work opens a convenient avenue to tuning the electronics of 2D materials and van der Waals heterostructures through pressure with nanometer resolution.

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Giant reversible nanoscale piezoresistance at room temperature in Sr₂IrO₄ thin films

Abstract: Fully reversible giant piezoresponse on Sr2IrO4 thin films enabled by the strain dependence of its band gap under vertical compression at the nanoscale.

Cited by 25 publications

References 34 publications

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

Integrated Charge Transfer in Organic Ferroelectrics for Flexible Multisensing Materials

Tunable Graphene Electronics with Local Ultrahigh Pressure

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Giant reversible nanoscale piezoresistance at room temperature in Sr2IrO4 thin films

Abstract: Fully reversible giant piezoresponse on Sr2IrO4 thin films enabled by the strain dependence of its band gap under vertical compression at the nanoscale.

Cited by 25 publications

References 34 publications

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

A Free‐Standing Molecular Spin–Charge Converter for Ubiquitous Magnetic‐Energy Harvesting and Sensing

Integrated Charge Transfer in Organic Ferroelectrics for Flexible Multisensing Materials

Tunable Graphene Electronics with Local Ultrahigh Pressure

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Product

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Giant reversible nanoscale piezoresistance at room temperature in Sr₂IrO₄ thin films