Giant positive magnetoresistance of Bi nanowire arrays in high magnetic fields

Hong, Kimin; Yang, Fengyuan; Li, Kai; Reich, Daniel H.; Searson, Peter C.; Chien, C. L.; Balakirev, Fedor; Boebinger, G. S.

doi:10.1063/1.370215

Cited by 69 publications

(27 citation statements)

References 11 publications

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“…Figure 8 shows the temperature dependence of the resistance of a 50 nm-diameter bismuth nanowire array, grown on a Pt-coated substrate. The resistance characteristics are very similar to those reported previously [31,32] for 200 nm-diameter polycrystalline bismuth nanowire arrays. We also took advantage of the relatively low nanowire density and the high dispersion in the nanowire length in arrays grown on Pt-coated wafers to sample the electrical properties of a small number of nanowires, even possibly an individual nanowire.…”

Section: Si Paasupporting

confidence: 88%

Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

Rabin

Herz

Lin

et al. 2003

Adv Funct Materials

244

201

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A method for the fabrication of thick films of porous anodic alumina on rigid substrates is described. The anodic alumina film was generated by the anodization of an aluminum film evaporated on the substrate. The morphology of the barrier layer between the porous film and the substrate was different from that of anodic films grown on aluminum substrates. The removal of the barrier layer and the electrochemical growth of nanowires within the ordered pores were accomplished without the need to remove the anodic film from the substrate. We fabricated porous anodic alumina samples over large areas (up to 70 cm2), and deposited in them nanowire arrays of various materials. Long nanowires were obtained with lengths of at least 9 μm and aspect ratios as high as 300. Due to their mechanical robustness and the built‐in contact between the conducting substrate and the nanowires, the structures were useful for electrical transport measurements on the arrays. The method was also demonstrated on patterned and non‐planar substrates, further expanding the range of applications of these porous alumina and nanowire assemblies.

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Section: Si Paasupporting

confidence: 88%

Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

Rabin

Herz

Lin

et al. 2003

Adv Funct Materials

244

201

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“…21 In addition to doped manganites, large magnetoresistance effects have been reported in pyrochlore Tl 2 Mn 2 O 7 , Cr-based chalcogenide spinels, Eu-based hexaboride, doped silver chalcogenides, naturally layered LaMn 2 Ge 2 , semimetallic Bi nanowire arrays, semiconducting InN film, GaAs/͑AlGa͒As, and Co-doped FeSb 2 . [34][35][36][37][38][39][40][41][42] Magnetic field induced changes in spin-dependent scattering, manifested as a negative CMR, [32][33][34] i.e., a decrease in the electrical resistivity when subjected to an applied magnetic field, is the underlying mechanism in all of these cases. This alone indicates a different mechanism from that observed in Tb 5 Si 2.2 Ge 1.8 .…”

Section: B Isothermal Magnetic Field Dependence Of Magnetoresistancementioning

confidence: 99%

“…This alone indicates a different mechanism from that observed in Tb 5 Si 2.2 Ge 1.8 . For materials exhibiting positive CMR effect, [38][39][40][41][42] the underpinning mechanisms were believed to be quantum interference effects, band splitting effects, or they were left without a feasible explanation. Yet, in the case of Tb 5 Si 2.2 Ge 1.8 it is the long-lived crystallographic phase coexistence that is responsible for the positive CMR effect.…”

Section: B Isothermal Magnetic Field Dependence Of Magnetoresistancementioning

confidence: 99%

Electrical resistivity and magnetoresistance of single-crystalTb5Si2.2Ge1.8

et al. 2009

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A positive colossal magnetoresistance (CMR) of 160% has been observed in Tb 5 Si 2.2 Ge 1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance (MR) is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a unique geometric arrangement of the interphase boundaries and large magnetocrystalline anisotropy of the compound. Keywords Materials Science and Engineering Disciplines Condensed Matter Physics | Metallurgy CommentsThis article is from Physical Review B 80, no. 17 (2009) A positive colossal magnetoresistance ͑CMR͒ of 160% has been observed in Tb 5 Si 2.2 Ge 1.8 with the magnetic field applied parallel to the a axis. When the magnetic field is applied parallel to the b and c axes, the magnetoresistance ͑MR͒ is less than 8% and 5%, respectively. The CMR effect originates from intrinsic crystallographic phase coexistence. The anisotropy of the MR effect is due to a unique geometric arrangement of the interphase boundaries and large magnetocrystalline anisotropy of the compound.

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“…Interest in Bi originates from its highly anisotropic electron Fermi surface, characterized by a low carrier density and a long mean free path, moreover possessing large spin-orbit interaction (SOI), rendering it an excellent platform for observing quantum transport in the strong SOI regime. Quantum transport in Bi films has been extensively studied [2][3][4][5][6][7][8][9] as have been self-assembled wires [10][11][12][13][14][15] . In particular, spin-dependent quantum transport in the form of weak-antilocalization has been observed in Bi films [3][4][5][6][7][8][9] and a nanowire array 14 .…”

mentioning

confidence: 99%

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

Rudolph

Heremans

2011

Phys. Rev. B

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We present low temperature magnetoresistance measurements on lithographically defined bismuth wires. The phase coherence time and the spin-orbit scattering time are obtained by analysis of weak-antilocalization, with values for the phase coherence time supported by analysis of the universal conductance fluctuations present in the wires. We find that the phase coherence time is dominated by electron-phonon scattering above ≈ 2 K and saturates below that temperature, with saturation delayed to a lower temperature in wider wires. The spin-orbit scattering time shows a weak temperature dependence above 2 K, and also shows a dependence on wire width. The spinorbit scattering time increases as the width is reduced, as also observed in wires fabricated from spin-orbit coupled two-dimensional systems in semiconductor heterostructures. The similarity is discussed in the light of weak-antilocalization in the two-dimensional strongly spin-orbit coupled Bi(001) surface states.

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Giant positive magnetoresistance of Bi nanowire arrays in high magnetic fields

Cited by 69 publications

References 11 publications

Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

Formation of Thick Porous Anodic Alumina Films and Nanowire Arrays on Silicon Wafers and Glass

Electrical resistivity and magnetoresistance of single-crystalTb5Si2.2Ge1.8

Spin-orbit interaction and phase coherence in lithographically defined bismuth wires

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