Giant polarization in super-tetragonal thin films through interphase strain

Zhang, Linxing; Chen, Jun; Fan, Longlong; Diéguez, Oswaldo; Cao, Jiangli; Wang, Yilin; Wang, Jinguo; Kim, Moon J.; Deng, Shiqing; Wang, Jiaou; Wang, Huanhua; Deng, Jinxia; Yu, Ranbo; Scott, J. F.; Xing, Xianran

doi:10.1126/science.aan2433

Cited by 206 publications

(165 citation statements)

References 60 publications

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“…Ferroelectrics have long been studied due to its switchable polarizations and thus are promising for a plethora of applications such as in electromechanical systems, [1,2] multiferroics systems, [3][4][5][6][7] and memory/energy storage systems. [8][9][10][11][12][13][14][15] Ferroelectric materials, in particular, perovskites ferroelectrics [8] such as Pb(Zr,Ti)O 3 (PZT), [16][17][18] BaTiO 3 , [19][20][21] and SrBi 2 Ta 2 O 9 [22,23] have been widely studied.…”

Section: Introductionmentioning

confidence: 99%

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Cao

Shi

Zhu

et al. 2021

Physica Rapid Research Ltrs

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Hafnia thin films have been under intensive research during the past few years due to its robust ferroelectricity under very thin limit and good compatibility with silicon. The polar crystal structure critical to ferroelectricity in hafnia thin films is metastable, and is generally obtained in polycrystalline thin films, coexisting with other nonpolar phases. Recently, much attention has been focused on epitaxial ferroelectric hafnia thin films to get rid of the nonpolar phases, to investigate the more intrinsic factors to ferroelectricity, and its potential applications. Herein, recent progress on the growth of epitaxial hafnia thin films is reviewed. The epitaxial growth mechanism is explored, in particular, the interface matching, phase stability under temperature and oxygen pressure, followed by discussions on thickness dependency of ferroelectricity, and wake-up effect in hafnia. Finally, an outlook on ferroelectric hafnia both on fundamental studies and future applications is discussed.

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Section: Introductionmentioning

confidence: 99%

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Cao

Shi

Zhu

et al. 2021

Physica Rapid Research Ltrs

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“…b Magnetic structure in the T phase rendering C-type antiferromagnetism (AFM-C); green arrows represent atomic magnetic moments and their orientation. c Examples of substrates in which to grow BCO thin films displaying the effects predicted in this study; other well-known materials exhibiting super-tetragonal phases are shown for comparison[19,22]. "SE" stands for magnetic super-exchange interactions.…”

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confidence: 96%

“…Common strategies employed to synthesize bettered multiferroic materials include doping [14,15], solid solutions [16,17], and strain engineering in thin films [1,18]. Through epitaxial strain is actually possible to create new multiferroic materials in the laboratory that ex- * Corresponding Author hibit giant electric polarization and unexpected magnetic spin ordering [19][20][21]. An illustrative example is given by BiFeO 3 (BFO), in which large spontaneous polarization and ferromagnetism (FM) have been observed under moderate compressive biaxial strains at room temperature [22,23].…”

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confidence: 99%

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Oxygen-vacancy induced magnetic phase transitions in multiferroic thin films

Menéndez¹,

Chu²,

Cazorla³

2019

Preprint

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Multiferroics in which giant ferroelectric polarization and magnetism coexist are of tremendous potential for engineering disruptive applications in information storage and energy conversion. Yet the functional properties of multiferroics are thought to be affected detrimentally by the presence of point defects, which may be abundant due to the volatile nature of some constituent atoms and high temperatures involved in materials preparation. Here, we demonstrate with theoretical methods that oxygen vacancies may enhance the functionality of multiferroics by radically changing their magnetic interactions in thin films.Specifically, oxygen vacancies may restore missing magnetic super-exchange interactions in large axial ratio phases, leading to full antiferromagnetic spin ordering, and induce the stabilization of ferrimagnetic states with a significant net magnetization of 0.5 µ B per formula unit. Our theoretical study should help to clarify the origins of long-standing controversies in bismuth ferrite and improve the design of technological applications based on multiferroics.

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“…Most notably, strain enhances the charge carrier mobility in modern electronics [2][3][4]. It allows the tuning of the optical properties of materials [5][6][7], can confer them with a ferroelectric nature [8,9], or even make them better superconductors [10]. Despite these successes, strain engineering is still a largely unexplored field considering the huge parameter space available; indeed, stress is characterized by six parameters (three axial components and three shear components, defining the stress tensor) which, in principle, can be continuously and independently varied over many orders of magnitude to optimize the functional properties of materials [1].…”

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confidence: 99%

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

Broadway,

Johnson,

Barson

et al. 2018

Preprint

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The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial mapping of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than 10 −6 ). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including mapping the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy.

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Giant polarization in super-tetragonal thin films through interphase strain

Cited by 206 publications

References 60 publications

An Overview of Ferroelectric Hafnia and Epitaxial Growth

An Overview of Ferroelectric Hafnia and Epitaxial Growth

Oxygen-vacancy induced magnetic phase transitions in multiferroic thin films

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

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