Giant piezoresistivity of polymer-derived ceramics at high temperatures

Terauds, Kalvis; Jiménez, Pilar; Raj, Rishi; Vakifahmetoğlu, Çekdar; Colombo, Paolo

doi:10.1016/j.jeurceramsoc.2010.02.024

Cited by 71 publications

(53 citation statements)

References 22 publications

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“…As shown below, C / SiOC containing 13.5 vol% of dispersed carbon exhibits k values of ≈ 10 2 in the temperature range from 1000 to 1200 • C. The k factor decreases with increasing temperature, indicating a direct correlation with activated electronic transport. The Arrhenius plot provides an activation energy of ≥ 0.3 eV for k. A similar behavior has been observed for C / SiOCN nanocomposites containing 8.5 vol% segregated carbon (Terauds et al, 2010). However, the two composites differ with respect to the magnitude of k. Rather high k values (k ≈ 10 3 ) have been reported for C / SiOCN in the temperature range 700 < T < 1000 • C. We note that the C / SiOCN composite has a lower carbon content than our sample and, accordingly, a higher resistivity and a higher k. In the following we present Raman data of the carbon phase of C / SiOC and combine them with the piezoresistivity results to provide evidence that the piezoresistive effect is linked to the microstructure of the carbon phase, notably its disordered non-crystalline part.…”

Section: Resultssupporting

confidence: 76%

“…However, commercially available piezoresistive sensors, which are usually based on semiconductors or polymer composites, are limited by their low thermal stability in air (Kanda and Suzuki, 1991). Recently, polymer-derived ceramics (PDCs) such as silicon oxycarbides (C / SiOC) or silicon carbo(oxy)nitrides (C / SiCN, C / SiOCN) have been shown to combine piezoresistivity (Riedel et al, 2010;Zhang et al, 2008, Terauds et al, 2010 with outstanding temperature and oxidation stability (Riedel et al, 1995(Riedel et al, , 1996. Hence, they are promising candidates for future high-temperature pressure sensors.…”

Section: Introductionmentioning

confidence: 99%

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High-temperature piezoresistive C / SiOC sensors

Roth

Schmerbauch

Ionescu

et al. 2015

J. Sens. Sens. Syst.

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Abstract.Here we report on the high-temperature piezoresistivity of carbon-containing silicon oxycarbide nanocomposites (C / SiOC). Samples containing 13.5 vol% segregated carbon have been prepared from a polysilsesquioxane via thermal cross-linking, pyrolysis and subsequent hot-pressing. Their electrical resistance was assessed as a function of the mechanical load (1-10 MPa) and temperature (1000-1200 • C). The piezoresistive behavior of the C / SiOC nanocomposites relies on the presence of dispersed nanocrystalline graphite with a lateral size ≤ 2 nm and non-crystalline carbon domains, as revealed by Raman spectroscopy. In comparison to highly ordered carbon (graphene, HOPG), C / SiOC exhibits strongly enhanced k factor values, even upon operation at temperatures beyond 1000 • C. The measured k values of about 80 ± 20 at the highest temperature reading (T = 1200 • C) reveal that C / SiOC is a primary candidate for high-temperature piezoresistive sensors with high sensitivity.

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Section: Resultssupporting

confidence: 76%

Section: Introductionmentioning

confidence: 99%

High-temperature piezoresistive C / SiOC sensors

Roth

Schmerbauch

Ionescu

et al. 2015

J. Sens. Sens. Syst.

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“…The sensitivity of a piezoresistive sensor is determined by the strain gauge factor, given by G = 1 R dR d , where R is the resistance and the strain. The largest ambient temperature G found for single crystalline bulk silicon is G = 170, 3,5 and for germanium G = 100. 6 The state of the art material in the industry is poly-silicon, with G < 10, which can be improved to G 20 by using p-type poly-SiGe.…”

Section: Introductionmentioning

confidence: 97%

“…6 The state of the art material in the industry is poly-silicon, with G < 10, which can be improved to G 20 by using p-type poly-SiGe. 7 Recently, gauge factors of G 1000 were reported for silicon oxycarbonitride polymer-derived ceramic 5 and a G = 843 for a silicon-metal hybrid. 8 A lot of excitement was produced by the report of giant piezoresistivity in silicon nanowires, 9,10 with the latest room temperature value reported being G = 280.…”

Section: Introductionmentioning

confidence: 99%

Giant piezoresistance in silicon-germanium alloys

Murphy-Armando

Fahy

2012

Phys. Rev. B

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Type of publicationArticle (peer-reviewed) We use first-principles electronic structure methods to show that the piezoresistive strain gauge factor of single-crystalline bulk n-type silicon-germanium alloys at carefully controlled composition can reach values of G = 500, three times larger than that of silicon, the most sensitive such material used in industry today. At cryogenic temperatures of 4 K we find gauge factors of G = 135 000, 13 times larger than that observed in Si whiskers. The improved piezoresistance is achieved by tuning the scattering of carriers between different ( and L) conduction band valleys by controlling the alloy composition and strain configuration.

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“…Recently, considerable amount of effort was invested by many groups to increase by nanostructuration the strain gauge factor (G ¼ ð1=RÞðdR=deÞ, where R is the resistance and e is the strain) of Si an Ge beyond their bulk values of around 170 [3,4] and 100 [5], respectively. In particular, giant piezoresistivity was recently reported in Si nanowires [6,7], demonstrating the great potential of low dimensional Sibased systems as promising candidates for next generation of piezoresistive nanosensors.…”

Section: Introductionmentioning

confidence: 99%

Valence band structure engineering of thin SiGe/Si quantum wells for piezoresistive applications

Reparaz

Goñi

Alonso

et al. 2013

Physica Status Solidi (b)

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In this work, we have theoretically investigated the influence of quantum confinement, biaxial stress, and high hydrostatic pressure on the valence band structure of Si 1Àx Ge x /Si quantum wells (QW) with x ranging from 0.1 to 0.75, QW thicknesses up to 50 nm, and hydrostatic pressures up to 8 GPa. Using the Nextnano simulator, we have solved the 6 Â 6 k Á p Hamiltonian obtaining the valence band eigenvalues (for light-and heavyhole states) as well as their dispersion close to k ¼ 0. We have found that for specific combinations of x, QW thickness, and hydrostatic pressure, it is possible to tailor the energy of the light-and heavy-hole states in such a way that they become almost degenerate for k ¼ 0.This results in a larger interaction between these sub-bands leading to an electron-like dispersion of certain hole sub-bands. We present representative examples showing that as pressure increases from 0 to 4 GPa the dispersion type of the hole states progressively evolves from electron-like to almost hole-like, which naturally produces sharp peaks in their corresponding density of states at k 6 ¼ 0. The opposite transition from hole-like to electron-like band dispersion is also briefly discussed. This peculiar behavior of the dispersion type of the valence subbands induced by hydrostatic pressure results particularly interesting for piezoresistive applications, since large changes in the electrical conductivity are expected as a function of external stress.

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Giant piezoresistivity of polymer-derived ceramics at high temperatures

Cited by 71 publications

References 22 publications

High-temperature piezoresistive C / SiOC sensors

High-temperature piezoresistive C / SiOC sensors

Giant piezoresistance in silicon-germanium alloys

Valence band structure engineering of thin SiGe/Si quantum wells for piezoresistive applications

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