Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

Yang, Yuchao; Song, Chao; Wang, X. H.; Zeng, Fanhao; Pan, Feng

doi:10.1063/1.2830663

Cited by 181 publications

(92 citation statements)

References 17 publications

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“…These V-O bonds are non collinear and can rotate easily with the application of external field (Gupta and Kumar 2011). Apart from this, the V-O bond has stronger polar nature than Zn-O (Yang et al 2007). Therefore the off-centred distortion and the formation of additional V-O bonds will result in the improvement in ferroelectric nature after V incorporation.…”

Section: Ferroelectric Hysteresis (P-e Loop)mentioning

confidence: 99%

Structural, optical and ferroelectric properties of V doped ZnO

et al. 2013

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Present work reports the structural, optical and ferroelectric properties of vanadium doped ZnO samples synthesized via solid state reaction method. X-ray diffraction (XRD) study confirms the presence of hexagonal wurtzite phase and the slight changes in lattice parameters is observed after V doping in host ZnO and impurity oxide of ZnV 2 O 6 . Presence of E 1 and E 2 modes in Raman spectroscopy of V doped ZnO indicates the stability of the wurtzite structure of ZnO, which is consistent with the XRD results. UV-Vis spectroscopy results show decrease in band gap of ZnO from 3.35 to 3.24 eV for 1 % V doped sample, whereas it increases with the V doping and increase in the impurity of ZnV 2 O 6 . Furthermore, it is observed that the ferroelectric polarisation of ZnO improves by V doping. Above results show that one need to consider the presence of ZnO in composite form of oxides of Zn and V and not as a pure V doped ZnO system.

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Section: Ferroelectric Hysteresis (P-e Loop)mentioning

confidence: 99%

Structural, optical and ferroelectric properties of V doped ZnO

et al. 2013

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“…In the past few few years, we have tried to modify ZnO films by transitionmetal (TM)-doping and successfully improved its piezoresponse. We obtained doped-ZnO with giant piezoresponse, Zn 0.975 V 0.025 O of 170pC/N [40], Zn 0. 94 [42,43].…”

Section: Introductionmentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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“…40 Nowadays, theoretical and experimental studies on doped ZnO materials have been performed to propose materials which might be viable alternatives to replace the perovskite materials. 6,9,10,12,19,20,29,[41][42][43] Thus, the aim of this study was to perform computational simulations based on DFT/B3LYP to evaluate the effect of low and large Ba doping on ZnO due to its great potential to replace perovskite-type materials in ferroelectric and opto-electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

Lacerda¹,

Lázaro²

2016

Química Nova

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publicado na web em 18/02/2015ZnO is a semiconductor material largely employed in the development of several electronic and optical devices due to its unique electronic, optical, piezo-, ferroelectric and structural properties. This study evaluates the properties of Ba-doped wurtzite-ZnO using quantum mechanical simulations based on the Density Functional Theory (DFT) allied to hybrid functional B3LYP. The Badoping caused increase in lattice parameters and slight distortions at the unit cell angle in a wurtzite structure. In addition, the doping process presented decrease in the band-gap (E g ) at low percentages suggesting band-gap engineering. For low doping amounts, the wavelength characteristic was observed in the visible range; whereas, for middle and high doping amounts, the wavelength belongs to the Ultraviolet range. The Ba atoms also influence the ferroelectric property, which is improved linearly with the doping amount, except for doping at 100% or wurtzite-BaO. The ferroelectric results indicate the ZnO:Ba is an strong option to replace perovskite materials in ferroelectric and flash-type memory devices.

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Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films

Cited by 181 publications

References 17 publications

Structural, optical and ferroelectric properties of V doped ZnO

Structural, optical and ferroelectric properties of V doped ZnO

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Ba-DOPED ZnO MATERIALS: A DFT SIMULATION TO INVESTIGATE THE DOPING EFFECT ON FERROELECTRICITY

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