Giant perpendicular exchange bias with antiferromagnetic MnN

Zilske, P.; Graulich, Dominik; Dunz, Mareike; Meinert, Markus

doi:10.1063/1.4983089

Cited by 40 publications

(30 citation statements)

References 27 publications

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“…However, the spin orientation is controversial and might depend critically on the lattice constants. In previous studies, some of the authors of this article have shown its utility for exchange bias applications with large exchange bias fields at room temperature [22][23][24][25][26][27]. However, the critical thickness for the onset of exchange bias was observed to be around 10 nm at room temperature, leading to the conclusion that MnN has a small magnetocrystalline anisotropy energy density [22].…”

Section: Introductionmentioning

confidence: 99%

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Dunz

Matalla-Wagner

Meinert

2020

Phys. Rev. Research

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Electrical switching and readout of antiferromagnets allows to exploit the unique properties of antiferromagnetic materials in nanoscopic electronic devices. Here we report experiments on the spin-orbit torque induced electrical switching of a polycrystalline, metallic antiferromagnet with low anisotropy and high Néel temperature. We demonstrate the switching in a Ta / MnN / Pt trilayer system, deposited by (reactive) magnetron sputtering. The dependence of switching amplitude, efficiency, and relaxation are studied with respect to the MnN film thickness, sample temperature, and current density. Our findings are consistent with a thermal activation model and resemble to a large extent previous measurements on CuMnAs and Mn2Au, which exhibit similar switching characteristics due to an intrinsic spin-orbit torque.

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Section: Introductionmentioning

confidence: 99%

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Dunz

Matalla-Wagner

Meinert

2020

Phys. Rev. Research

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“…Hence, the possibility of achieving a large out-of-plane loop shift using MnN is of great interest. Zilske et al [23] reported a giant perpendicular exchange bias of 3.6 kOe at room temperature in MnN/CoFeB bilayers. The samples had a similar composition and identical deposition conditions to some of the in-plane samples described earlier.…”

Section: Exchange Bias: Out-of-plane Studiesmentioning

confidence: 99%

Recent Developments on MnN for Spintronic Applications

Vallejo-Fernández

Meinert

2021

Magnetochemistry

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There is significant interest worldwide to identify new antiferromagnetic materials suitable for device applications. Key requirements for such materials are: relatively high magnetocrystalline anisotropy constant, low cost, high corrosion resistance and the ability to induce a large exchange bias, i.e., loop shift, when grown adjacent to a ferromagnetic layer. In this article, a review of recent developments on the novel antiferromagnetic material MnN is presented. This material shows potential as a replacement for the commonly used antiferromagnet of choice, i.e., IrMn. Although the results so far look promising, further work is required for the optimization of this material.

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“…Для ультратонкого тонкого слоя CoFeB толщиной 0.65 нм в системе MnN / CoFeB / MgO / TA может быть достигнуто значение h EB = 3600 Э [24].…”

Section: заключениеunclassified

Study the exchange bias field in ferromagnetic film on antiferromagnetic substrate

Белим

2021

Lett. Mater.

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In the article, exchange bias in a ferromagnetic film on an antiferromagnetic substrate is studied. These systems are widely used in spintronics devices to fix the state of one of the ferromagnets. The computer simulation method is used for the study. The Ising model and Metropolis algorithm are used. A thin ferromagnetic film on a semi-infinite antiferromagnetic substrate is considered. The layered antiferromagnet model is used for the substrate. The exchange value for the antiferromagnet is lower than for the ferromagnetic film. The Neel temperature for the substrate is lower than the Curie temperature for the ferromagnetic film. For both components of the system, phase transition temperatures are calculated. The exchange bias field is created by exchange interaction at the interface of the film with the substrate. At temperatures above the Neel temperature, the surface layer for the antiferromagnet is not compensated and does not create exchange bias. The dependence of the exchange bias field on the system's temperature is investigated. Exchange bias shifts the hysteresis loop. The position of the hysteresis loop center determines the exchange bias field. As the temperature decreases, the chess magnetization for the antiferromagnetic substrate and the magnetic moment for the boundary spins layer increase. A computer experiment was performed. The dependence of the exchange bias field on temperature near the phase transition point for the antiferromagnet is linear. As the temperature decreases, the exchange bias becomes constant. This transition is associated with maximizing the chess magnetization of the antiferromagnetic substrate. With a decrease in temperature, the width of the hysteresis loop increases. The width of the hysteresis loop decreases linearly with increasing temperature. A comparison is made with the results of real experiments.

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Giant perpendicular exchange bias with antiferromagnetic MnN

Cited by 40 publications

References 27 publications

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Spin-orbit torque induced electrical switching of antiferromagnetic MnN

Recent Developments on MnN for Spintronic Applications

Study the exchange bias field in ferromagnetic film on antiferromagnetic substrate

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