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Thio, Tineke; Solin, S. A.; Bennett, J. W.; Hines, D. R.; Kawano, Motoharu; Oda, Naoki; Sano, Megumi

doi:10.1103/physrevb.57.12239

Cited by 27 publications

(25 citation statements)

References 16 publications

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“…Large, positive MRs were reported on inhomogeneous systems by Thio et al [31,32]. However, here a quadratic dependence on applied ®eld was also found, unlike the observation of Xu et al [1].…”

Section: Discussioncontrasting

confidence: 57%

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Fang

Groot

Wiegers

2002

Journal of Physics and Chemistry of Solids

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Section: Discussioncontrasting

confidence: 57%

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Fang

Groot

Wiegers

2002

Journal of Physics and Chemistry of Solids

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“…Over the past two decades a number of materials with large MR, such as organic semiconductors [10,11], pregraphitic carbon nanofibers, hydrogenated and fluorinated graphene [12][13][14], amorphous Si doped with magnetic rare-earth ions [15] and bulk germanium doped by multiply charged impurities [16], SnO 2 [17], silver chalcogenides [4,18,19], zero-bandgap Hg 1−x Cd x Te [20], and frustrated metallic ferromagnets [21], which are characterized by extreme field sensitivity and/or large values of MR, have been studied in detail, because of their potential for technological applications such as magnetic sensors and/or magnetoresistive reading heads in magnetic recording [22]. Special attention has been paid also to several types of compounds with magnetic d or f ions having "colossal" negative magnetoresistance (CMR) such as manganites [23,24] and cobaltites [25], double perovskites [26], europium-based hexaborides [27], manganese oxide pyrochlores [3,28], Cr-based chalcogenide spinels [29,30], chromium dioxides [31], GdSi [32], MnSi [33], CeB 6 and * nes@lt.gpi.ru CeAl 2 [34,35], and Zintl compound Eu 14 MnBi 11 [36], where the MR reaches its largest value near ferro-or antiferromagnetic phase transitions and is quite temperature dependent in this region.…”

Section: Introductionmentioning

confidence: 99%

Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Sluchanko

Khoroshilov²,

Anisimov³

et al. 2015

Phys. Rev. B

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The magnetoresistance (MR) ρ/ρ of the cage-glass compound Ho x Lu 1−x B 12 with various concentrations of magnetic holmium ions (x 0.5) has been studied in detail concurrently with magnetization M(T ) and Hall effect investigations on high-quality single crystals at temperatures 1.9-120 K and in magnetic field up to 80 kOe. The undertaken analysis of ρ/ρ allows us to conclude that the large negative magnetoresistance (nMR) observed in the vicinity of the Néel temperature is caused by scattering of charge carriers on magnetic clusters of Ho 3+ ions, and that these nanosize regions with antiferromagnetic (AF) exchange inside may be considered as short-range-order AF domains. It was shown that the Yosida relation − ρ/ρ ∼ M 2 provides an adequate description of the nMR effect for the case of Langevin-type behavior of magnetization. Moreover, a reduction of Ho-ion effective magnetic moments in the range 3-9 μ B was found to develop both with temperature lowering and under the increase of holmium content. A phenomenological description of the large positive quadratic contribution ρ/ρ ∼ μ 2 D H 2 which dominates in Ho x Lu 1−x B 12 in the intermediate temperature range 20-120 K allows us to estimate the drift mobility exponential changes μ D ∼ T −α with α = 1.3-1.6 depending on Ho concentration. An even more comprehensive behavior of magnetoresistance has been found in the AF state of Ho x Lu 1−x B 12 where an additional linear positive component was observed and attributed to charge-carrier scattering on the spin density wave (SDW). High-precision measurements of ρ/ρ = f (H,T ) have allowed us also to reconstruct the magnetic H-T phase diagram of Ho 0.5 Lu 0.5 B 12 and to resolve its magnetic structure as a superposition of 4f (based on localized moments) and 5d (based on SDW) components.

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“…This induced magnetoresistance ͑MR͒ depends generically on whether the magnetic field is oriented perpendicular ͑transverse MR͒ or parallel ͑longitudinal MR͒ to the current direction. In recent experiments, Solin and co-workers 9,10 have harnessed this effect by crafting composite materials in which current deflections around highly conducting inhomogeneities significantly enhance the intrinsic transverse MR of Hg 1−x Cd x Te. This designer approach depends on the mismatch in the physical MR of the two components and leads to a significant, quadratic magnetoresistance that saturates by H ϳ 0.5 T.…”

Section: Introductionmentioning

confidence: 99%

Nonsaturating magnetoresistance of inhomogeneous conductors: Comparison of experiment and simulation

2007

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The silver chalcogenides provide a striking example of the benefits of imperfection. Nanothreads of excess silver cause distortions in the current flow that yield a linear and nonsaturating transverse magnetoresistance ͑MR͒. Associated with the large and positive MR is a negative longitudinal MR. The longitudinal MR only occurs in the three-dimensional limit and thereby permits the determination of a characteristic length scale set by the spatial inhomogeneity. We find that this fundamental inhomogeneity length can be as large as 10 m. Systematic measurements of the diagonal and off-diagonal components of the resistivity tensor in various sample geometries show clear evidence of the distorted current paths posited in theoretical simulations. We use a random-resistor network model to fit the linear MR, and expand it from two to three dimensions to depict current distortions in the third ͑thickness͒ dimension. When compared directly to experiments on Ag 2±␦ Se and Ag 2±␦ Te, in magnetic fields up to 55 T, the model identifies conductivity fluctuations due to macroscopic inhomogeneities as the underlying physical mechanism. It also accounts reasonably quantitatively for the various components of the resistivity tensor observed in the experiments.

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Giant magnetoresistance in zero-band-gapHg1−xCdxTe

Cited by 27 publications

References 16 publications

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Ab initio band structure calculations of the low-temperature phases of Ag2Se, Ag2Te and Ag3AuSe2

Charge transport inHoxLu1−xB12: Separating positive and negative magnetoresistance in metals with magnetic ions

Nonsaturating magnetoresistance of inhomogeneous conductors: Comparison of experiment and simulation

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