Giant magnetoresistance in a two-dimensional electron gas modulated by periodically repeated magnetic barriers

Papp, G.; Borza, S.

doi:10.1016/j.ssc.2010.08.013

Cited by 6 publications

(1 citation statement)

References 24 publications

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“…In this work, the spin dependent term is not involved because it plays a minor role on determining the transport properties 18,19 and would be ignored in our calculation. 10,[20][21][22][23][24] Using the Landau gauge, the vector potential can be written as…”

Section: Theoretical Modelmentioning

confidence: 99%

Effects of magnetic barriers on transport and magnetoresistance in a two-dimensional electronic device

Zhang

Wang

et al. 2016

AIP Advances

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We study theoretically the giant magnetoresistance (GMR) effect of 2-dimensional electron system (2DES) by the transfer matrix method. To produce the inhomogeneous magnetic field, two magnetic strips are pre-deposited on the surface of 2DES. In our work, we fix the magnetization M in one magnetic strip and adjust the tilting angle θ of magnetization in the other. The result shows that the electronic transmission and conductance vary significantly for different θ. The minimum conductance can be obtained at θ = π which corresponds to the magnetization anti-parallel alignment. The magnetoresistance ratio (MRR) calculation also indicates we would get the maximum in that case. Furthermore, we consider the magnetization M dependence of MRR in this work. When M increases, MRR peaks get higher and broader and more numbers of peaks can be observed. These results offer an alternative to get a tunable GMR device which can be controlled by adjusting the magnetization M and the magnetized angle θ.

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