Giant Magnetoresistance Effect in CoFeB/Cu/CoFeB Spin Valves

Shirota, Yoshihiro; Tsunashima, S.; Imada, R.; Nomura, Y.; Iwata, S.; Jimbo, M.

doi:10.1143/jjap.38.714

Cited by 7 publications

(4 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…The emerging field dubbed "straintronics" [58][59][60][61][62][63][64] involves the integration of strain with spintronic devices including magnetic tunnel junctions and magnetic spin valves, therefore it is necessary to study stress dependence of GMR effect in magnetic spin valve devices [65][66][67][68][69][70][71][72][73] . The giant magnetoresist-ance (GMR) effect [74,75] , discovered in 1988, is widely applied in read heads of ultrahigh density magnetic recording systems and magnetic sensors; the deposition of GMR films onto flexible substrates was first demonstrated by Parkin et al in 1992 [76] .…”

Section: Stress Dependence Of Gmr Effect In Magnetic Spin Valve Devicesmentioning

confidence: 99%

Flexible magnetic thin films and devices

Sheng

Wang

2018

J. Semicond.

View full text Add to dashboard Cite

Flexible electronic devices are highly attractive for a variety of applications such as flexible circuit boards, solar cells, paper-like displays, and sensitive skin, due to their stretchable, biocompatible, light-weight, portable, and low cost properties. Due to magnetic devices being important parts of electronic devices, it is essential to study the magnetic properties of magnetic thin films and devices fabricated on flexible substrates. In this review, we mainly introduce the recent progress in flexible magnetic thin films and devices, including the study on the stress-dependent magnetic properties of magnetic thin films and devices, and controlling the properties of flexible magnetic films by stress-related multi-fields, and the design and fabrication of flexible magnetic devices.

show abstract

Section: Stress Dependence Of Gmr Effect In Magnetic Spin Valve Devicesmentioning

confidence: 99%

Flexible magnetic thin films and devices

Sheng

Wang

2018

J. Semicond.

View full text Add to dashboard Cite

show abstract

“…Selama rotasi magnetisasi dari antiparalel menuju paralel terjadi perubahan resistansi yang besar. Asal dari perubahan resistansi ini adalah hamburan elektron antara wilayah magnetisasi paralel dan antiparalel yang disebut dengan spin dependent transport [2].…”

Section: Indonesiaunclassified

Analisa Magnetoresistance Berbasis Lapisan Tipis Giant Magnetoresistance (GMR) Pada Nanopartikel Cobalt Ferrite (CoFe2O4) Dilapisi Polyethylen Glicol (PEG)

Susanti

Suharyadi

2017

J. Fis. Indones.

View full text Add to dashboard Cite

AbstrakTelah dilakukan pengukuran magnetoresistance pada lapisan tipis spin valve GMR yang memiliki struktur CoFeB/Cu/CoFe/MnIr dengan memvariasikan ketebalan lapisan barrier Cu (2,2 dan 2,8 nm) dan free layer CoFeB (7 dan 10 nm) menggunakan System Four Point Probe Method (SFPPM) pada medan eksternal 0-600 gauss. Dihasilkan perubahan range resistansi (69, 29 − 71, 74)Ω untuk Cu 2,2 nm dan (38, 5 − 40, 47)Ω untuk ketebalan Cu 2,8 nm. Pada variasi ketebalan CoFeB dihasilkan perubahan range resistansi untuk ketebalan 7 nm dan 10 nm masing-masing adalah (38, 74 − 41, 11)Ω dan (69, 29 − 71, 74)Ω. Selanjutnya lapisan tipis digunakan sebagai sensor magnetik untuk mendeteksi kehadiran nanopartikel CoFe 2 O 4 , CoFe 2 O 4 yang dimodifikasi PEG dan CoFe 2 O 4 termodifikasi PEG yang telah mengikat biomolekul formalin. Terjadi pergeseran nilai resistansi ketika lapisan tipis dilapisi nanopartikel magnetik tersebut. Hal ini menunjukkan bahwa lapisan tipis GMR mampu mendeteksi prilaku spin pada nanopartikel magnetik CoFe 2 O 4 . kata kunci: giant magnetoresistance; lapisan tipis; nanopartikel CoFe 2 O 4 , polyethelyn glicol AbstractMagnetoresistance measurements were carried out in a thin film of the spin valve GMR structure CoFeB/Cu/CoFe/MnIr by varying the thickness of the barrier layer of Cu (2,2 and 2,8 nm) and CoFeB free layer (7 and 10 nm) using System Four Point probe Method (SFPPM) in the external field 0-600 Gauss. It was found that the changes in the resistance range were (69.29 − 71.74)Ω for Cu 2,2 nm and (38.5 − 40.47)Ω for Cu 2,8 nm. In variations of CoFeB thickness, the changes in the resistance range for the thickness of 7 nm and 10 nm were (38.74 − 41.11)Ω and (69.29 − 71.74)Ω respectively. Furthermore, a thin layer is used as a magnetic sensor to detect the presence of CoFe 2 O 4 nanoparticles, PEG coated CoFe 2 O 4 and CoFe 2 O 4 modified by PEG that was bonded with formalin biomolecules. A shift in resistance value occurs when a thin layer of the coated magnetic nanoparticles. This suggests that the thin layer of the GMR is able to detect the behavior of magnetic spins of CoFe 2 O 4 magnetic nanoparticles.

show abstract

“…Dalam spin valve NiO/CoFeB/Cu/CoFeB, perubahan ketebalan free layer CoFeB dengan memvariasikan kandungan boron (B). Untuk kandungan B yang kecil, rasio MR naik dengan cepat seiring naiknya tebal free layer, dan untuk kandungan B yang besar, nilai rasio MR maksimum ditunjukkan dengan ketebalan (secara kasar) rata-rata gerak bebas elektron pada lapisan maknetik [5] (Polyetilen Glikol) [7].…”

Section: Pendahuluanunclassified

Pengukuran Magnetoresistance Berbasis Lapisan Tipis Giant-Magnetoresistance (GMR) Pada Polyethylen Glicol (PEG)-Coated-Nanopartikel Magnetit (Fe3O4) (Halaman 5 s.d. 8)

Rampengan¹,

Ma’arif

Nuzully

et al. 2014

J. Fis. Indones.

Self Cite

View full text Add to dashboard Cite

Telah dilakukan pengujian Magnetoresitance berbasis lapisan tipis Giant-Magnetoresistance (GMR) pada Plyethylen Glicol (PEG)-coated-nanopartikel magnetit (Fe3O4). Penambahan lapisan nanopartikel magnetit Fe3O4 dan lapisan nanopartikel magnetit Fe3O4 yang dimodifikasi dengan PEG menyebabkan pergeseran nilai resistance pada lapisan tipis GMR dan mempengaruhi pergerakan domain-wall free layer FeCoB seiring dengan bertambahnya medan eksternal. Hasil ini ditunjukkan dengan pergeseran nilai resistansi sebesar ± 55,5 %, sebelum dan setelah dilapisi oleh nanopartikel magnetit Fe3O4. Resistansi ± 45,6 %, sebelum dan setelah dilapisi oleh nanopartikel magnetit Fe3O4 yang dimodifikasi dengan PEG.

show abstract

Giant Magnetoresistance Effect in CoFeB/Cu/CoFeB Spin Valves

Cited by 7 publications

References 7 publications

Flexible magnetic thin films and devices

Flexible magnetic thin films and devices

Analisa Magnetoresistance Berbasis Lapisan Tipis Giant Magnetoresistance (GMR) Pada Nanopartikel Cobalt Ferrite (CoFe2O4) Dilapisi Polyethylen Glicol (PEG)

Pengukuran Magnetoresistance Berbasis Lapisan Tipis Giant-Magnetoresistance (GMR) Pada Polyethylen Glicol (PEG)-Coated-Nanopartikel Magnetit (Fe3O4) (Halaman 5 s.d. 8)

Contact Info

Product

Resources

About