2021
DOI: 10.1088/1361-648x/ac3102
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Giant magnetoresistance and topological Hall effect in the EuGa4 antiferromagnet

Abstract: We report on systematic temperature- and magnetic field-dependent studies of the EuGa4 binary compound, which crystallizes in a centrosymmetric tetragonal BaAl4-type structure with space group I4/mmm. The electronic properties of EuGa4 single crystals, with an antiferromagnetic (AFM) transition at T N ∼ 16.4 K, were characterized via electrical resistivity and magnetization measurements. A giant nonsaturating magnetoresistance was observed at low temperatures, reaching … Show more

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Cited by 18 publications
(15 citation statements)
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References 66 publications
(174 reference statements)
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“…Single crystals of EuAl 4 and EuGa 4 were grown by a molten Al-and Ga-flux method, respectively, the details of growth being reported elsewhere [6,7]. The crystal orientation was checked by x-ray diffraction (XRD) measurements using a Bruker D8 diffractometer with Cu K α radiation.…”
Section: Methodsmentioning
confidence: 99%
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“…Single crystals of EuAl 4 and EuGa 4 were grown by a molten Al-and Ga-flux method, respectively, the details of growth being reported elsewhere [6,7]. The crystal orientation was checked by x-ray diffraction (XRD) measurements using a Bruker D8 diffractometer with Cu K α radiation.…”
Section: Methodsmentioning
confidence: 99%
“…Among these materials, the Eu-4 f electrons bring new intriguing aspects to the topology. Both EuAl 4 and EuGa 4 are antiferromagnets below their critical temperatures T N = 15.6, and 16.4 K, respectively, with the former also undergoing a CDW transition at T CDW ∼ 140 K [6][7][8][9][10][11][12]. Further, while EuGa 4 exhibits only one antiferromagnetic (AFM) transition, EuAl 4 undergoes four subsequent AFM transitions below T N .…”
Section: Introductionmentioning
confidence: 99%
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