Giant field enhancement in longitudinal epsilon-near-zero films

Kamandi, Mohammad; Guclu, Caner; Luk, Ting S.; Wang, George T.; Capolino, Filippo

doi:10.1103/physrevb.95.161105

Cited by 30 publications

(19 citation statements)

References 25 publications

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“…We define field intensity enhancement below the top surface of the slab as As detailed in Ref. 28 , the superior performance of the LENZ originates from the fact that its losses may be overcome by simply enlarging the transverse (to the z-axis) permittivity ( t,FF…”

Section: Second-harmonic Generation From Ienz and Lenzmentioning

confidence: 99%

“…These characteristics are generally desirable in practical implementations of nonlinear optical devices. Moreover, as demonstrated in 28 , the presence of anisotropy circumvents damping and improves field enhancement without resorting to loss compensation techniques.…”

Section: Introductionmentioning

confidence: 99%

“…LENZ have been investigated for their abilities to achieve perfect light bending 23,24 , angular filtering and polarization control 25 , coherent perfect absorption 26 , and to control leaky wave radiation 27 . Very recently, it has been theoretically demonstrated that a TM-polarized field obliquely incident on a LENZ film produces a stronger field intensity enhancement (FIE) than its isotropic ENZ (IENZ) counterpart 28 , and that it might therefore lead to stronger nonlinear processes. LENZ media also present other advantages over IENZ ones, such as weaker sensitivity of the FIE to the slab thickness, and a broader operational regime in terms of angle of incidence 28 .…”

Section: Introductionmentioning

confidence: 99%

“…Very recently, it has been theoretically demonstrated that a TM-polarized field obliquely incident on a LENZ film produces a stronger field intensity enhancement (FIE) than its isotropic ENZ (IENZ) counterpart 28 , and that it might therefore lead to stronger nonlinear processes. LENZ media also present other advantages over IENZ ones, such as weaker sensitivity of the FIE to the slab thickness, and a broader operational regime in terms of angle of incidence 28 . These characteristics are generally desirable in practical implementations of nonlinear optical devices.…”

Section: Introductionmentioning

confidence: 99%

“…A comparison with the SHG radiated from a homogeneous Dy:CdO slab also suggests that a novel class of nonlinear devices that do not rely on bulk nonlinearities may be envisioned. The peculiar ability of LENZ materials to provide high FIE values even in presence of losses 28 makes them appealing for several nonlinear applications, such as second harmonic generation, sum-and difference-frequency generation, spontaneous parametric down conversion, optical parametric amplification, bistability and switching, in key photonic platforms based on centrosymmetric materials, such as Si and Si-oninsulator (SOI).…”

Section: Introductionmentioning

confidence: 99%

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Second-harmonic generation in longitudinal epsilon-near-zero materials

et al. 2017

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We investigate second harmonic generation from anisotropic or longitudinal epsilon-near-zero materials. We find conversion efficiencies well above their isotropic counterparts thanks to additional field intensity enhancement provided by the anisotropy. At the same time anisotropic epsilon-near-zero materials are also less sensitive to material's losses compared to the isotropic ones. In turn, these improvements become pivotal for epsilon-near-zero materials that do not possess bulk dipole-allowed quadratic nonlinearities. We predict that second harmonic generation from a Dy:CdO/Si multilayer with longitudinal epsilon-near-zero properties can exceed the conversion efficiency of a homogeneous Dy:CdO slab of equivalent thickness by at least 20 times for almost any angle of incidence.

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Section: Second-harmonic Generation From Ienz and Lenzmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Second-harmonic generation in longitudinal epsilon-near-zero materials

et al. 2017

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Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

Gurung

Anopchenko

Bej

et al. 2020

Adv Materials Inter

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Enhanced and controlled light absorption, as well as field confinement in optically thin materials, are pivotal for energy‐efficient optoelectronics and nonlinear optical devices. Highly doped transparent conducting oxide (TCO) thin films can support the so‐called epsilon near zero (ENZ) modes in a frequency region of near‐zero permittivity, which can lead to the perfect light absorption and ultrastrong electric field intensity enhancement (FIE) within the films. To achieve full control over absorption and FIE, one must be able to tune the ENZ material properties as well as the film thickness. Here, engineered absorption and FIE are experimentally demonstrated in aluminum‐doped zinc oxide (AZO) thin films via control of their ENZ wavelengths, optical losses, and film thicknesses, tuned by adjusting the atomic layer deposition (ALD) parameters such as dopant ratio, deposition temperature, and the number of macrocycles. It is also demonstrated that under ENZ mode excitation, though the absorption and FIE are inherently related, the film thickness required for observing maximum absorption differs significantly from that for maximum FIE. This study on engineering ENZ material properties by optimizing the ALD process will be beneficial for the design and development of next‐generation tailorable photonic devices based on flat, zero‐index optics.

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Epsilon‐Near‐Zero Photonics: A New Platform for Integrated Devices

Niu

Chu

et al. 2018

Advanced Optical Materials

196

110

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Epsilon‐near‐zero (ENZ) photonics is the study of light–matter interactions in the presence of structures with near‐zero permittivity and has been emerging as an important field of research in recent years. The introduction of zero permittivity structures also introduces a number of unique features to traditional photonic systems, including decoupling of their spatial and temporal field variations, tunneling through arbitrary channels, constant phase transmission, strong field confinement, and ultrafast phase transitions. Along with the continued developments in the theoretical research on ENZ photonics, many novel functional photonic devices are proposed and demonstrated experimentally, thus indicating the broad prospects of ENZ photonics for fabrication of high‐performance integrated photonic chips. Zero‐epsilon materials, which represent a singular point in optical materials, are expected to lead to remarkable developments in the fields of integrated photonic devices and optical interconnections. This review summarizes the underlying principles, the related novel physical effects, the fundamental principles for realization of ENZ photonic systems, and the integrated device applications of ENZ photonics. The review concludes with a brief overview of the challenges to be confronted and the potential development directions that may be pursued to realize extensive applications of ENZ photonics in the field of integrated photonic signal processing.

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Giant field enhancement in longitudinal epsilon-near-zero films

Cited by 30 publications

References 25 publications

Second-harmonic generation in longitudinal epsilon-near-zero materials

Second-harmonic generation in longitudinal epsilon-near-zero materials

Atomic Layer Engineering of Epsilon‐Near‐Zero Ultrathin Films with Controllable Field Enhancement

Epsilon‐Near‐Zero Photonics: A New Platform for Integrated Devices

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