2023
DOI: 10.1021/acs.macromol.2c01952
|View full text |Cite
|
Sign up to set email alerts
|

Giant Electrostriction Enabled by Defect-Induced Critical Phenomena in Relaxor Ferroelectric Polymers

Abstract: Polymers that generate large shape changes under electric stimulation are of great interest for many applications. Recently, it was shown that converting a small amount of chlorofluoroethylene (CFE) in relaxor ferroelectric poly­(vinylidene fluoride–trifluoroethylene–CFE) (PVDF-TrFE-CFE) terpolymer into fluorinated alkyne (FA) creates P­(VDF-TrFE-CFE-FA) tetrapolymers with giant electromechanical (EM) response at ultralow electric fields (<50 MV/m). We investigate the microscopic origin of this effect and show… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
8
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

1
5

Authors

Journals

citations
Cited by 9 publications
(8 citation statements)
references
References 30 publications
(53 reference statements)
0
8
0
Order By: Relevance
“…[47] The working mechanism of this method is shown in Figure 5e, [48] where a voltage generator applies an electric field to the piezoelectric material, and then the induced strain is detected by a high-resolution displacement sensor, such as the photonic sensor (or called Fotonic sensor, MTI optical fiber measurement system, fiber-optic probe), [48][49][50] laser displacement sensor (or called laser Doppler vibrometers), [51,52] and linear variable differential transformer (LVDT). [29,53] Generally, two different inverse piezoelectric coefficients are obtained from the S-E loops, i.e., the d ij calculated as the slope the S-E loops at low electric fields (below the coercive field, E c ), [30,36] and the largesignal d ij * measured at high electric fields using the equation, [47] d ij * = S max /E max , where S max and E max are the maximum strain and the maximum electric field, respectively. The d ij is accurate to evaluate the intrinsic piezoelectricity.…”
Section: Basic Principles and Measurements Of Piezoelectric Coefficie...mentioning
confidence: 99%
“…[47] The working mechanism of this method is shown in Figure 5e, [48] where a voltage generator applies an electric field to the piezoelectric material, and then the induced strain is detected by a high-resolution displacement sensor, such as the photonic sensor (or called Fotonic sensor, MTI optical fiber measurement system, fiber-optic probe), [48][49][50] laser displacement sensor (or called laser Doppler vibrometers), [51,52] and linear variable differential transformer (LVDT). [29,53] Generally, two different inverse piezoelectric coefficients are obtained from the S-E loops, i.e., the d ij calculated as the slope the S-E loops at low electric fields (below the coercive field, E c ), [30,36] and the largesignal d ij * measured at high electric fields using the equation, [47] d ij * = S max /E max , where S max and E max are the maximum strain and the maximum electric field, respectively. The d ij is accurate to evaluate the intrinsic piezoelectricity.…”
Section: Basic Principles and Measurements Of Piezoelectric Coefficie...mentioning
confidence: 99%
“…This reveals that the polarization of the tetrapolymer peaks at the terpolymers with 1.9 mol% FA-the same composition of the ECE peak. The peak position of polarization also suggests that 1.9 mol% FA tetrapolymer locates at a composition that close to the end critical point, which is considered as an efficient approach to enhance EM and EC performances of ferroelectric relaxors [28][29][30][31]. ∆S and P data were used to determine the phenomenological β coefficient, ∆S = 1 /2 β P 2 (figure 1(e)).…”
Section: Ece Of the P(vdf-trfe-cfe-fa) Tetrapolymersmentioning
confidence: 99%
“…12 Poly(vinylidene fluoride-trifluoroethylene-chlorofluoroethylene) (P(VDF-TrFE-CTFE)) is a chemically inert material, and its domain-controllable strategies are complicated and tedious for chemical modifications. [13][14][15][16] Several efforts have been devoted to patterning ferroelectric polymer nanostructures using highresolution and well-defined anodic aluminum oxide (AAO) molds 17,18 or a hundred-nanometer-level silicon mold. 19,20 Nanoconfined crystallization in the mold is conducive for the formation of one-type orientation domains, thus showing excellent data storage behavior for single-dimensional FeRAM.…”
Section: Introductionmentioning
confidence: 99%