2016
DOI: 10.1103/physrevb.94.235305
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Giant acoustoelectric current in suspended quantum point contacts

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Cited by 7 publications
(6 citation statements)
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References 20 publications
(24 reference statements)
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“…[231][232][233] Subsequently, the Rayleigh SAW, viewed as a moving electrical superlattice potential, was shown to modify the electronic dispersion of ballistic graphene close to the charge-neutrality point [234][235][236] with an acoustoelectric current that is dependent on the SAW propagation direction. [237][238][239] Similar acoustoelectric coupling has also been observed in graphene ranoribbons, [240,241] QDs, [242][243][244][245] suspended quantum point contacts, [246] GaAs [247] and GaAs/AlGaAs hetrostructures, [248,249] and, more recently, 2D materials such as MoS 2 [250] and black phosphorous, [251] in which an anomalous acoustoelectric current was sustained.…”
Section: Electronic Manipulationmentioning
confidence: 75%
“…[231][232][233] Subsequently, the Rayleigh SAW, viewed as a moving electrical superlattice potential, was shown to modify the electronic dispersion of ballistic graphene close to the charge-neutrality point [234][235][236] with an acoustoelectric current that is dependent on the SAW propagation direction. [237][238][239] Similar acoustoelectric coupling has also been observed in graphene ranoribbons, [240,241] QDs, [242][243][244][245] suspended quantum point contacts, [246] GaAs [247] and GaAs/AlGaAs hetrostructures, [248,249] and, more recently, 2D materials such as MoS 2 [250] and black phosphorous, [251] in which an anomalous acoustoelectric current was sustained.…”
Section: Electronic Manipulationmentioning
confidence: 75%
“…Most of the studied low-dimensional electron systems are based on a two-dimensional electron gas (2DEG) embedded in a semiconductor bulk, such as, for example, in a GaAs/ AlGaAs heterostructure. However, this widely used material is also suitable for creating low-dimensional electron systems in thin heterostructural membranes freely suspended over a substrate [1][2][3][4][5][6][7][8][9]. To achieve this, at the growth stage, a sacrificial layer with a high aluminum content is incorporated into the heterostructure between the substrate and the overlying layers which subsequently form a membrane.…”
Section: Introductionmentioning
confidence: 99%
“…The negative current and the current oscillations at even larger negative gate voltages are related to different physical mechanisms as addressed in Ref. 6.…”
mentioning
confidence: 96%
“…where the dependence of the conductivity on the gate voltage, r exp (V g ), can be taken from the experimental data of Ref. 6. The effect of the magnetic field is given by 10…”
mentioning
confidence: 99%