GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

Dinh, Duc V.; Quan, Zhiheng; Roycroft, B.; Parbrook, P. J.; Corbett, Brian

doi:10.1364/ol.41.005752

Cited by 42 publications

(22 citation statements)

References 31 publications

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“…While very small devices have some relaxation, the most effective field reduction strategy is to use semipolar or nonpolar material. [ 137 ] Modulation performances of ≈1 GHz have been demonstrated [ 138 ] and comparative studies on polar/semipolar devices confirm a bandwidth improvement using this approach. [ 139 ] A calibrated modulation bandwidth of 1.5 GHz has also been shown for a nonpolar micro‐LED.…”

Section: Visible Light Communication (Vlc)mentioning

confidence: 99%

Micro‐Light Emitting Diode: From Chips to Applications

Parbrook

Corbett

Han

et al. 2021

Laser & Photonics Reviews

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139

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Typical light‐emitting diodes (LEDs) have a form factor >(300 × 300) µm2. Such LEDs are commercially mature in illumination and ultralarge displays. However, recent LED research includes shrinking individual LED sizes from side lengths >300 µm to values <100 µm, leading to devices called micro‐LEDs. Their advent creates a number of exciting new application spaces. Here, a review of the principles and applications of micro‐LED technology is presented. In particular, the implications of reduced LED size in necessitating mitigation strategies for nonradiative device edge damage as well as the potential for higher drive current densities are discussed. The opportunities to integrate micro‐LEDs with electronics, and into large‐scale arrays, allow pixel addressable scalable integrated displays, while the small micro‐LED size is ideal for high‐speed modulation for visible light communication, and for integration into biological systems as part of optogenetic therapies.

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Section: Visible Light Communication (Vlc)mentioning

confidence: 99%

Micro‐Light Emitting Diode: From Chips to Applications

Parbrook

Corbett

Han

et al. 2021

Laser & Photonics Reviews

Self Cite

139

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“…On the other hand, nonpolar and semipolar LEDs offer a reduction in recombination lifetime due to their larger wavefunction overlaps . The modulation bandwidths as a function of current density for selected nonpolar and semipolar planes are compared with reported c‐ plane micro‐LEDs in Figure . Nonpolar and semipolar LEDs offer significantly enhanced modulation bandwidths at much lower current densities, which is beneficial for minimizing power consumption and efficeincy droop.…”

Section: Successes and Challengesmentioning

confidence: 99%

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Monavarian

Rashidi

Feezell

2018

Phys. Status Solidi A

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The performance of III-nitride devices is degraded by polarization in a wurtzite crystal structure. Nonpolar and semipolar III-nitrides have been extensively studied since the early 2000s as a solution to the polarizationrelated issues. Removal of polarization is expected to improve the radiative efficiency, optical gain, charge transport, and potentially offer solutions to the challenging problems in III-nitride light-emitting diodes (LEDs) known as efficiency droop and the green gap. In addition, use of nonpolar and semipolar orientations is also predicted to offer polarization pinning in some devices due to anisotropic in-plane strain. Despite the many potential advantages over c-plane, nonpolar and semipolar optoelectronic devices have not successfully replaced conventional c-plane devices in the commercial sector. Here, nonpolar and semipolar III-nitrides are reviewed after more than a decade of development. The successes and challenges of nonpolar and semipolar orientations for applications such as LEDs, laser diodes, superluminescent diodes, and vertical-cavity surface emitting lasers are discussed. New potential avenues for nonpolar and semipolar III-nitrides are also highlighted, including visible-light communication and power electronics. The availability of low-cost, high-crystal-quality substrates with nonpolar or semipolar orientation is discussed and alternative approaches for realizing these orientations are presented, including selective-area bottom-up nanostructures.

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“…4,18 The highest reported bandwidths in QW LEDs are saturated near 1 GHz (GaN) and 1.7 GHz (GaAs). 4,6,7,19 …”

Section: Fundamentals Of Modulation For Lasers and Ledsmentioning

confidence: 99%

“…7,8 Superluminescent diodes (SLDs) are attractive light emitters exhibiting the advantages of speckle noise-free, high output power, and spatial coherence. In addition, SLDs can be high-speed transmitters, overcoming LED limitations.…”

mentioning

confidence: 99%

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

Lee

Shen

Cozzan

et al. 2018

Gallium Nitride Materials and Devices XIII

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We report the high-speed performance of semipolar GaN ridge laser diodes at 410 nm and the dynamic characteristics including differential gain, damping, and the intrinsic maximum bandwidth. To the best of our knowledge, the achieved modulation bandwidth of 6.8 GHz is the highest reported value in the blue-violet spectrum. The calculated differential gain of ~3 x 10 -16 cm 2 , which is a critical factor in high-speed modulation, proved theoretical predictions of higher gain in semipolar GaN laser diodes than the conventional c-plane counterparts. In addition, we demonstrate the first novel white lighting communication system by using our near-ultraviolet (NUV) LDs and pumping red-, green-, and blueemitting phosphors. This system satisfies both purposes of high-speed communication and high-quality white light illumination. A high data rate of 1.5 Gbit/s using on-off keying (OOK) modulation together with a high color rendering index (CRI) of 80 has been measured.

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GHz bandwidth semipolar (112¯2) InGaN/GaN light-emitting diodes

Cited by 42 publications

References 31 publications

Micro‐Light Emitting Diode: From Chips to Applications

Micro‐Light Emitting Diode: From Chips to Applications

A Decade of Nonpolar and Semipolar III-Nitrides: A Review of Successes and Challenges

Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems

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