Gettering of copper to hydrogen-induced cavities in silicon

Wong‐Leung, Jennifer; Ascheron, C.; Petravić, M.; Elliman, R. G.; Williams, J. S.

doi:10.1063/1.113246

Cited by 122 publications

(49 citation statements)

References 5 publications

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“…Other work has shown that cavities can act as precipitation sites for Au [28], and might be implemented using this mechanism. We infer that if cavities are introduced, they might be able to getter some species by chemisorption while reducing the levels of stronger silicide-formers like Co and Fe by providing improved precipitation sites for them.…”

Section: Discussionmentioning

confidence: 99%

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Cavity formation and impurity gettering in He-implanted Si

Follstaedt

Myers

Petersen

et al. 1996

J. Electron. Mater.

118

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Cavity microstructures formed in Si after ion implantation of He and annealing at 700°C or above are examined with cross-section transmission electron microscopy. A threshold concentration of 1.6 at.% He is identified to form cavities that survive such anneals. The cavities coarsen with a constant volume of 15 nm3/nm2 (per wafer surface area), corresponding to -0.75 lattice sites per implanted He atom. The internal area of the cavities is 3-7 times that of the wafer surface area for fluences of lx1017 He/cm2.Transition metal atoms (Cu, Ni, Coy Fe, Au) are shown to be strongly trapped (1.5 -2.2 eV) on the cavity walls by chemisorption. Whereas Cu, Au and Ni are bound more strongly to the cavity sites than to their respective precipitated phases, Co and Fe are more strongly bound to their silicides; nonetheless, appreciable trapping of Co and Fe does occur in equilibrium with the silicides. Cavity trapping appears to be an effective gettering mechanism at low impurity levels, as needed to meet future microelectronics device requirements.

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Section: Discussionmentioning

confidence: 99%

“…In work done by Wong-Leung et al [28], the interaction of Au with cavities formed by implanting H has been studied in detail. In their experimental configuration, the Au migrates to the cavities and precipitates there, presumably via the eutectic reaction.…”

Section: I;mentioning

confidence: 99%

Cavity formation and impurity gettering in He-implanted Si

Follstaedt

Myers

Petersen

et al. 1996

J. Electron. Mater.

118

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“…1. ͑a͒ SIMS Cu depth profile for the sample implanted at 40 keV, 8ϫ10 15 He ϩ /cm 2 , RT, channeling direction, contaminated by 1 ϫ10 12 Cu ϩ /cm 2 after 800°C/10 min RTA. The SIMS profile is combined with a XTEM bright field micrograph of the same sample.…”

Section: Random Implantationmentioning

confidence: 99%

“…3 The capture of metal impurities in MeV implanted Si has been detected by secondary ion mass spectrometry ͑SIMS͒ at the depth corresponding to the projected range, R p , of the implanted ions, where a buried layer of extended lattice defects can be observed by transmission electron microscopy ͑TEM͒. However, in addition to the gettering at R p , the trapping of metals at the R p /2 region has also been detected for MeV ion implanted Si in the 10 15 at/cm 2 fluence range, after thermal annealing in the 700-1000°C temperature interval. This phenomenon, called ''the R p /2 gettering effect'' was first observed by Tamura, Ando, and Ohya 4 by studying the gettering of O in czochralski ͑CZ͒ Si after MeV implantation of a variety of ions, such as C, F, Si, Ge, and As.…”

Section: Introductionmentioning

confidence: 99%

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Gettering of copper in silicon at half of the projected ion range induced by helium implantation

Peeva

Fichtner

Silva

et al. 2002

Journal of Applied Physics

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Secondary ion mass spectroscopy, transmission electron microscopy, Rutherford backscattering/ channeling spectrometry, and elastic recoil detection analysis measurements were used to determine the Cu gettering behavior induced by He implanted into Si samples. This study was done in an iterative way by changing the implanted He fluence (5ϫ10 15 -3ϫ10 16 cm Ϫ2 ), implantation temperature ͑room temperature or 350°C͒, and implantation conditions ͑random or channel implants͒. Upon postimplantation annealing at 800°C for 600 s, in addition to the gettering at the projected range (R p ) region, the room temperature implanted samples also present Cu gettering in a region corresponding to the half of the projected range (R p /2) depth. Also a threshold fluence (⌽Ϸ7ϫ10 15 at/cm 2 ) was determined for the appearance of the R p /2 effect. In contrast, for the 350°C implants, the Cu impurities are detected only close to the R p region where the He induced cavities are formed. The gettering effect at R p /2 region is discussed in terms of the cavity formation mechanisms and their influence on the point defect fluxes taking place during the thermal annealing.

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Annealing Behavior of Crystalline Si Implanted with High Dose of Protons

Zhang¹,

Wang²,

Zhou³

et al. 1998

phys. stat. sol. (a)

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Single crystal silicon wafers have been implanted by 5×1016 cm—2 H+ ions at an energy of 140 keV at room temperature. After cutting, the samples were annealed at temperatures ranging from 200 to 900 °C for 30 min and examined by Rutherford backscattering and channeling spectroscopy, and cross‐sectional transmission electron microscopy. The results indicate that the extended defects induced by high‐dose H+ implantation are stable below 400 °C. Annealed at temperatures higher than 450 °C, these complex defects can be reduced and most of the initial radiation damage converts into voids at 900 °C. Thermal treatment at T ≥ 450 °C produces blisters and flakes on the sample surface, resulting in the lattice distortion of the surface layer. The results have been interpreted by the assumption of the formation of Hs and microbubbles at T ≥ 400 °C in high dose H+‐implanted Si.

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Gettering of copper to hydrogen-induced cavities in silicon

Cited by 122 publications

References 5 publications

Cavity formation and impurity gettering in He-implanted Si

Cavity formation and impurity gettering in He-implanted Si

Gettering of copper in silicon at half of the projected ion range induced by helium implantation

Annealing Behavior of Crystalline Si Implanted with High Dose of Protons

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