2009
DOI: 10.18494/sam.2009.543
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Gettering by CF4-Ar Plasma-Treated Titanium within Anodically Bonded Glass-Silicon Microcavities

Abstract: The gettering of CF 4 -Ar plasma-treated titanium films has been studied by X-ray photoelectron spectroscopy, optical microscopy and field emission scanning electron microscopy. This study shows a convenient way to eliminate the native oxide impurities from the titanium surface before getter activation. A vacuum-packaged environment and the activation conditions for 2 mm × 1.8 mm × 2500 Å titanium getter films were realized by a glass-silicon anodic bonding process at 400°C and a 40 min thermal treatment at 50… Show more

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