GeTe/MoTe₂ Van der Waals Heterostructures: Enabling Ultralow Voltage Memristors for Nonvolatile Memory and Neuromorphic Computing Applications

Abstract

Advanced electronic semiconducting Van der Waals heterostructures (HSs) are promising candidates for exploring next‐generation nanoelectronics owing to their exceptional electronic properties, which present the possibility of extending their functionalities to diverse potential applications. In this study, GeTe/MoTe2 HS are explored for nonvolatile memory and neuromorphic‐computing applications. Sputter‐deposited Ag/GeTe/MoTe2/Pt HS cross‐point devices are fabricated, and they demonstrate memristor behavior at ultralow switching voltages (VSET: 0.15 V and VRESET: −0.14 V) with very low energy consumption (≈30 nJ), high memory window, long retention time (104 s), and excellent endurance (105 cycles). Resistive switching is achieved by adjusting the interface between the Ag top electrode and the heterojunction switching layer. Cross‐sectional transmission electron microscope images and conductive atomic force microscopy analysis confirm the presence of a conducting filament in the heterojunction switching layer. Further, emulating various synaptic functions of a biological synapse reveals that GeTe/MoTe2 HS can be utilized for energy‐efficient neuromorphic‐computing applications. A multilayer perceptron is implemented using the synaptic weights of the Ag/GeTe/MoTe2/Pt HS device, revealing high pattern accuracy (81.3%). These results indicate that HS devices can be considered a potential solution for high‐density memory and artificial intelligence applications.