GeSn Mid-infrared Nanophotonic Resonant Absorbers

Peng, Siying; Braun, Michael; Meng, Andrew C.; Shang, Zhengrong; Salleo, Alberto; McIntyre, Paul C.

doi:10.1109/phosst.2019.8794995

Cited by 1 publication

(2 citation statements)

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“…Currently, the application of out-of-plane GeSn NWs is still in the phase of basic research and technology development. However, the literature indicates that out-of-plane GeSn NWs have many potential applications, especially as infrared photodetectors [55,62,91,159,162,[166][167][168], high-efficiency Li-ion battery anodes [122], nanowire SWIR lasers [152,169,170], nanowire transistors (figure 8) [55,60,61,[171][172][173][174][175].…”

Section: Potential Applications Of Out-of-plane Gesn Nwsmentioning

confidence: 99%

“…They found that as long as the optical generation rate in the Ge core exceeds the non-radiative recombination rate due to the defects on the outer surface of the shell, the spillover of charge carriers from the core into the GeSn layer contributes to the observation of strong photoluminescence at room temperature, which promises to enable highly sensitive submicro-footprint photodetection in the midinfrared region. Peng et al optimized the Mie resonances of individual NWs at the desired bandgap wavelength [166]. They tuned the Mie resonances of GeSn/Ge structures (40 nm diameter Ge core, 110 nm thickness GeSn shell) with refractive index (n > 4) to the desired wavelength by varying the diameter and height of individual NWs.…”

Section: Infrared Photodetectorsmentioning

confidence: 99%

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Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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As silicon integrated circuits become more and more integrated, traditional electrical interconnections have been their technological limitations, and GeSn materials have attracted a lot of interest due to their potential transition to direct bandgap as well as their compatibility with Si-based technology in recent years. GeSn materials, including GeSn films, GeSn alloys, and GeSn nanowires, are adjustable, scalable, and compatible with silicon. GeSn nanowires, as one-dimensional nanomaterials, including out-of-plane GeSn nanowires and in-plane GeSn nanowires, have different properties from those of bulk materials due to their distinctive structures. However, the former is rarely reported. In this article, we present the preparation of out-of-plane GeSn nanowires using top-down (etching and lithography) and bottom-up (VLS growth mechanism in the vapor-phase method and SFLS, SLS, and SVG growth mechanisms in the liquid-phase method) methods. We also provide a brief description of the applications of out-of-plane GeSn nanowires with various Sn contents and morphologies.

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