GeSn lasers for CMOS integration

Buca, D.; Driesch, Nils von den; Stange, Daniela; Wirths, Stephan; Geiger, R.; Braucks, C. Schulte; Mantl, S.; Hartmann, Jean‐Michel; Ikonić, Z.; Witzens, Jeremy; Sigg, H.; Grützmacher, Detlev

doi:10.1109/iedm.2016.7838472

Cited by 8 publications

(3 citation statements)

References 6 publications

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“…However, the performance of Si- and Ge-based materials in optics and photonics is limited by their indirect bandgap. Theoretical and experimental reports describe a modification of the Ge band structure to make direct gap emission more favorable by using tensile or uniaxial strain. − Alternatively, the light emission and absorption characteristics of Ge change dramatically, when a threshold concentration exceeds ∼8–10% Sn in Ge 1– x Sn x rendering it in a direct bandgap material which was experimentally observed , and also calculated. , Ge 1– x Sn x is compatible with CMOS processing based on Si technology and therefore an ideal candidate for infrared optoelectronics and optical devices, such as infrared lasers, ,− photodetectors, , or light-emitting diodes. − In addition, the electronic properties are also altered upon Sn incorporation in the Ge matrix which should result in an enhanced electron and hole mobility making Ge 1– x Sn x interesting for high-speed electronics. − An incorporation of Sn in the Ge lattice in a bottom-up synthesis should be carried out under kinetic control, because the binary phase diagram reveals the low equilibrium solubility of Sn in Ge (<1%) . Aside from thin-film growth studies and postgrowth etching to prepare desired morphologies, reports on Ge 1– x Sn x nanostructures are emerging. − Morphological control has been achieved creating core–shell Ge/Ge 1– x Sn x using Ge NWs as templates and non-template-based metal-seed-supported growth of Ge 1– x Sn x nanowires via gas-phase , and solution-based synthesis. , To date, the compositions vary in these reports on the growth of anisotropic Ge 1– x Sn x nanostructures with the highest values being in the range 9–13% Sn. ,, Moreover, a transition to a semimetallic behavior with interesting applications can be expected when the Sn content is increased above 41% .…”

Section: Introductionmentioning

confidence: 98%

Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

et al. 2017

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Ge 1−x Sn x nanorods (NRs) with a nominal Sn content of 28% have been prepared by a modified microwavebased approach at very low temperature (140 °C) with Sn as growth promoter. The observation of a Sn-enriched region at the nucleation site of NRs and the presence of the low temperature -Sn phase even at elevated temperatures support a template-supported formation mechanism. The behaviour of two distinct Ge 1−x Sn x compositions with high Sn content of 17% and 28% upon thermal treatment has been studied and reveal segregation events occurring at elevated temperatures, but also demonstrate the temperature window of thermal stability. In situ transmission electron microscopy investigations revealed a diffusion of metallic Sn clusters through the Ge 1−x Sn x NRs associated with temperatures where the material composition changes drastically. These results are important for the explanation of distinct composition changes in Ge 1−x Sn x and the observation of solid diffusion combined with dissolution and redeposition of Ge 1−y Sn y (x>y) exhibiting a reduced Sn content. Absence of metallic Sn results in increased temperature stability by ~70 °C for Ge 0.72 Sn 28 NRs and ~60 °C for Ge 0.83 Sn 17 nanowires (NWs). In addition, a composition-dependent direct bandgap of the Ge 1−x Sn x NRs and NWs with different composition is illustrated using Tauc plots. ASSOCIATED CONTENT Supporting Information. Additional SEM, TEM, EDX and XRD data are provided. Moreover, a video for the phase separation in the TEM is supplied. This material is available free of charge via the Internet at http://pubs.acs.org.

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Section: Introductionmentioning

confidence: 98%

Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

et al. 2017

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“…The efficient incorporation of high Sn contents in Ge can be achieved by crystal growth under non-equilibrium conditions ruled by kinetics. These metastable Ge 1– x Sn x materials are candidates for infrared optoelectronics and optical devices, such as lasers, − photodetectors, , or light-emitting diodes − due to their composition-dependent direct band gaps …”

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confidence: 99%

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

et al. 2019

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Highly oriented Ge 0.81 Sn 0.19 nanowires have been synthesized by a low temperature chemical vapor deposition growth technique. The nanostructures form by a self-seeded vapor-liquid-solid mechanism. In this process, liquid metallic Sn seeds enable the anisotropic crystal growth and act as sole source of Sn for the formation of the metastable Ge 1-x Sn x semiconductor material. The strain relaxation for a lattice mismatch of  = 2.94 % between the Ge (111) substrate and the constant Ge 0.81 Sn 0.19 composition of nanowires is confined to a transition zone of <100 nm. In contrast, Ge 1-x Sn x structures with diameters in the micrometer-range show a fivefold longer compositional gradient very similar to epitaxial thin film growth. Effects of the Sn growth promoters' dimensions on the morphological and compositional evolution of Ge 1-x Sn x are described. The temperature and laser power dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge 0.81 Sn 0.19 (e.g. band gap of 0.3 eV at room temperature). These materials with band gaps in the mid-IR hold promise in applications such as thermal imaging and photodetection as well as building blocks for group IV-based mid-to near-IR photonics.

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“…GeSn material is a considerable member of semiconductor materials [1][2][3][4][5]. At present, GeSn PDs are widely used in biosensing [6], free space optical communication [7], gas detection [8], and other aspects.…”

Section: Introductionmentioning

confidence: 99%

Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector

Jaturapitakkul

Huang

et al. 2023

Phys. Scr.

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Due to the large lattice mismatch between GeSn and Si materials, high-density threading dislocation (TD) forms when GeSn films are grown by epitaxial growth. This leads to the increase of the dark current density (DCD) of the device. The wafer-bonded technique is a promising method to prepare high-quality thin films. This has been used to produce the Si-based GeSn materials with low threading dislocation density (TDD). However, there are a lot of bubbles at the bonded interface, resulting in the deterioration of the performance of the device. The study of bubbles on the performance of the GeSn PIN photodetector (PD) has not been reported. In this paper, the effect of the bonding bubbles on the performance of the device is performed. The photocurrent, dark current, charge concentration, electric field, and 3dB-bandwidth (BW) as a function of the bubble radius and thickness are demonstrated. In addition, the effect of the bubble radius on the 3dB-BW (~18 GHz) is insignificant when the bubble thickness is 1 nm. Similarly, when the bubble radius is 1 μm, the 3dB-BW (~18 GHz ) slightly decreases with the increase of the bubble thickness. The 3dB-BW decreases to ~17 GHz when the bubbles are close to the size of the top mesa. However, the 3dB-BW drops drastically with the increase of the bubble thickness when the bubble radius reaches 7 μm. Mostimportantly, the 3dB-BW sharply decreases to ~30 MHz regardless of the thickness of the bubble when the bubble radius of 14 μm is set. This may provide guidance for the application of the wafer-bonded GeSn PIN PD.

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GeSn lasers for CMOS integration

Cited by 8 publications

References 6 publications

Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector

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GeSn lasers for CMOS integration

Cited by 8 publications

References 6 publications

Pushing the Composition Limit of Anisotropic Ge1–xSnx Nanostructures and Determination of Their Thermal Stability

Pushing the Composition Limit of Anisotropic Ge1–xSnx Nanostructures and Determination of Their Thermal Stability

Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters

Effect of bubbles at the bonded interface on the performance of GeSn/Si PIN photodetector

Contact Info

Product

Resources

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Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

Pushing the Composition Limit of Anisotropic Ge_1–xSn_x Nanostructures and Determination of Their Thermal Stability

Epitaxial Ge_0.81Sn_0.19 Nanowires for Nanoscale Mid-Infrared Emitters