GeSi strained nanostructure self-assembly for nano- and opto-electronics.

Abstract

Strain-induced self-assembly during semiconductor heteroepitaxy offers a promising approach to produce quantum nanostructures for nanologic and optoelectronics applications. Our current research direction aims to move beyond self-assembly of the basic quantum dot towards the fabrication of more complex, potentially functional structures such as quantum dot molecules and quantum wires. This report summarizes the steps taken to improve the growth quality of our GeSi molecular beam epitaxy process, and then highlights the outcomes of this effort. This is the final report for LDRD 79943, "GeSi Strained Nanostructure Self-Assembly for Nano-and Opto-Electronics".