Germanium Wafers Possessing Facet‐Dependent Electrical Conductivity Properties

Abstract

Electrical conductivity properties of Ge {100}, {110}, {111}, and {211} facets have been measured by breaking Ge (100) and (111) wafers to expose {110} and {211} surfaces and contacting the different facets with tungsten probes. Ge {111} and {211} faces are far more conductive than the already conductive Ge {100} and {110} faces, matching with recent density functional theory (DFT) predictions. Asymmetric I–V curves resembling those of p‐n junctions have been collected for the {110}/{111} and {110}/{211} facet combinations. The current‐rectifying effects stem from different degrees of surface band bending for the highly and less conductive faces and the direction of current flow. This work demonstrates that germanium wafers also possess facet‐dependent electrical conductivity responses that can be utilized in the fabrication of novel fin field‐effect transistors (finFET).

Surface-dependent band structure variations and bond deviations of GaN

“…Various semiconductor materials, including Cu 2 O, Ag 2 O, PbS, TiO 2 , and SrTiO 3 crystals, as well as intrinsic Si, Ge, and GaAs wafers, have shown strongly facet-dependent electrical conductivity properties. [1][2][3][4][5][6][7][8][9] For example, a {111}-terminated Cu 2 O octahedron is highly conductive, but a {110}-bound Cu 2 O rhombic dodecahedron is insulative. 1 A {100}-bound Cu 2 O cube has a more typical semiconductor I-V response.…”

Magnesium Klorida (MgCl2): Karakteristik dan Dinamika Molekuler Pada MgCl2

“…Konduktivitas listrik (238)(239)(240)(241)(242) adalah ukuran kemampuan suatu larutan untuk menghantarkan arus listrik. Arus listrik di dalam larutan dihantarkan oleh ion yang terkandung di dalamnya.…”

Scalable Synthesis of Size-Tunable Small Cu2O Nanocubes and Octahedra for Facet-Dependent Optical Characterization and Pseudomorphic Conversion to Cu Nanocrystals

“…8,9 Electrical conductivity measurements on Si and Ge wafers match with DFT predictions. 10,11 Thus, the observed semiconductor facet phenomena have a quantum mechanical origin.…”