Germanium vacancy centre formation in CVD nanocrystalline diamond using a solid dopant source

Narrowband photoluminescence of Tin-Vacancy colour centres in Sn-doped chemical vapour deposition diamond microcrystals

“…The exact shift values for Ge-V and Sn-V centres are an order-of-magnitude higher than that for Si-V centres [54]. So, although for Si-V centres this effect may be neglected, for Ge-V centres such a random shift in the peak position has already been reported [55]. The observed values of tensile/compressive stress of +0.25 to −1.5 GPa imply that the possible spectral shift may reach up to ≈10 nm.…”

Fluorescent Nanodiamonds for Nanoscale Thermometry in Biology

“…However, it is important to mention that, in general, detonation ND are much inferior in properties to CVD or HPHT nanocrystals, which were available for NV and SiV experiments earlier. Thus, these two types of nanodiamond synthesis attract a lot of attention and are actively used for the fabrication of GeV centers in ND [51][52][53] nowadays. Further improvement of the production of ND with GeV centers will increase the usability and sensitivity of that diamond defect.…”

In situ doping of epitaxial diamond with germanium by microwave plasma CVD in GeH4–CH4–H2 mixtures with optical emission spectroscopy monitoring

“…1,[10][11][12] The latter techniques have the advantage of obtaining a variety of structures, including diamond nanoand microparticles, thin films, and single crystals of large size. Ge-doped CVD diamond growth in hydrogen-methane gas mixtures with Ge atoms and radicals from solid Ge precursors in the form of Ge wafers 1,2,[13][14][15][16][17] or GeO 2 particles 18 is often used owing to the simplicity of the approach. The Ge solid is subjected to etching by atomic hydrogen in the plasma, forming volatile GeH x products that participate in the doping of growing diamond.…”