Germanium tin: silicon photonics toward the mid-infrared [Invited]

Kasper, E.; Kittler, M.; Oehme, Michael; Arguirov, T.

doi:10.1364/prj.1.000069

Cited by 126 publications

(71 citation statements)

References 41 publications

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“…Another recent photonic material development has been germanium tin (GeSn), a group IV binary compound semiconductor alloy with direct band-gap below 0.8 eV at certain compositions. No GeSn laser has been demonstrated yet, but electroluminescence devices spanning ∼1530-1900 nm wavelengths have been reported [53].…”

Section: Iii-v Lasers On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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Silicon photonics has been established as a mature and promising technology for optoelectronic integrated circuits, mostly based on the silicon-on-insulator (SOI) waveguide platform. However, not all optical functionalities can be satisfactorily achieved merely based on silicon, in general, and on the SOI platform, in particular. Long-known shortcomings of silicon-based integrated photonics are optical absorption (in the telecommunication wavelengths) and feasibility of electrically-injected lasers (at least at room temperature). More recently, high two-photon and free-carrier absorptions required at high optical intensities for third-order optical nonlinear effects, inherent lack of second-order optical nonlinearity, low extinction ratio of modulators based on the freecarrier plasma effect, and the loss of the buried oxide layer of the SOI waveguides at mid-infrared wavelengths have been recognized as other shortcomings. Accordingly, several novel waveguide platforms have been developing to address these shortcomings of the SOI platform. Most of these emerging platforms are based on heterogeneous integration of other material systems on silicon substrates, and in some cases silicon is integrated on other substrates. Germanium and its binary alloys with silicon, III-V compound semiconductors, silicon nitride, tantalum pentoxide and other high-index dielectric or glass materials, as well as lithium niobate are some of the materials heterogeneously integrated on silicon substrates. The materials are typically integrated by a variety of epitaxial growth, bonding, ion implantation and slicing, etch back, spin-on-glass or other techniques. These wide range of efforts are reviewed here holistically to stress that there is no pure silicon or even group IV photonics per se. Rather, the future of the field of integrated photonics appears to be one of heterogenization, where a variety of different materials and waveguide platforms will be used for different purposes with the common feature of integrating them on a single substrate, most notably silicon.

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Section: Iii-v Lasers On Siliconmentioning

confidence: 99%

Emerging heterogeneous integrated photonic platforms on silicon

Fathpour

2015

Nanophotonics

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“…1 Multi quantum well structures and superlattices based on tensile strained Ge/GeSn virtual substrates have been proposed as active materials for infrared light emitting devices integrated in a silicon-based photonic platform. [2][3][4] In these systems, owing to the a-Sn vs Ge lattice mismatch ($14%), the GeSn relaxed buffer layer induces in Ge a biaxial tensile strain parallel to the sample surface e par , which profoundly modifies its band structure, transforming it in a quasi-direct band gap semiconductor for e par > 1.6%.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 All the discussed in situ process steps involve temperatures at which Ge/GeSn structures are unstable. 1 In fact, the semiconducting diamond lattice a-GeSn phase, needed for the epitaxial growth of GeSn alloy, is stable only at temperatures below 13.2 C. Moreover, Sn has low eutectic temperature of approximately 230 C for alloying in Ge and its thermal equilibrium solid solubility is $1% only. As a consequence, the precipitation of metallic Sn clusters and Sn segregation on the GeSn surface is observed at temperatures exceeding the growth temperature.…”

Section: Introductionmentioning

confidence: 99%

Epi-cleaning of Ge/GeSn heterostructures

Gaspare

Sabbagh

Seta

et al. 2015

Journal of Applied Physics

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We demonstrate a very-low temperature cleaning technique based on atomic hydrogen irradiation for highly (1 %) tensile strained Ge epilayers grown on metastable, partially strain relaxed GeSn buffer layers. Atomic hydrogen is obtained by catalytic cracking of hydrogen gas on a hot tungsten filament in an ultra-high vacuum chamber. X-ray photoemission spectroscopy, reflection high energy electron spectroscopy, atomic force microscopy, secondary ion mass spectroscopy, and micro-Raman showed that an O- and C-free Ge surface was achieved, while maintaining the same roughness and strain condition of the as-deposited sample and without any Sn segregation, at a process temperature in the 100-300 °C range

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“…[1][2][3] Often the viability of these applications requires process based strain engineering or alloying. Germanium's high hole mobility can be improved through strain engineering, and its small, indirect band gap can be transformed into a direct band gap material by alloying with other elements including tin (Sn).…”

Section: Introductionmentioning

confidence: 99%

Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

Medikonda¹,

Muthinti²,

Vasić³

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The characterization of the optical properties of pseudomorphic Ge1−xSnx/Ge/Si (x = 0 to 0.11) alloys from the IR to UV is presented. The Ge1−xSnx alloys were epitaxially grown on relaxed Ge grown on Si. Rutherford backscattering (RBS) and RBS ion channeling methods were used to confirm the Sn composition and substitutional nature of the Sn into the Ge lattice. The pseudomorphic nature of the Ge1−xSnx on Ge is confirmed using high resolution x-ray diffraction (HRXRD) and transmission electron microscopy. Although HRXRD reciprocal space maps indicated that the Ge1−xSnx was pseudomorphic to Ge, the shape of the Bragg peaks indicated that the sample surface was rough. The rough surface morphology is confirmed using atomic force microscopy. The complex dielectric function is reported in the IR, visible, and UV spectrum in the wavelength range of 0.2–5.06 eV. The E1, E1 + Δ1, E2, and E0 critical points are extracted using second and third derivative line shape fitting and are compared with the elastic theory calculations of strained Ge1−xSnx (x = 0 to 0.11) alloys and fully relaxed Ge1−xSnx (x = 0 to 0.11) alloys. The E0 critical point energies are observed to have slightly larger values than those calculated for completely relaxed Ge1−xSnx alloys due to the presence of compressive strain.

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Germanium tin: silicon photonics toward the mid-infrared [Invited]

Cited by 126 publications

References 41 publications

Emerging heterogeneous integrated photonic platforms on silicon

Emerging heterogeneous integrated photonic platforms on silicon

Epi-cleaning of Ge/GeSn heterostructures

Optical properties of pseudomorphic Ge1−xSnx (x = 0 to 0.11) alloys on Ge(001)

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