Germanium-on-SOI waveguides for mid-infrared wavelengths

Younis, Usman; Vanga, Sudheer Kumar; Lim, Andy Eu-Jin; Lo, Patrick; Bettiol, Andrew A.; Ang, Kah‐Wee

doi:10.1364/oe.24.011987

Cited by 39 publications

(18 citation statements)

References 11 publications

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“…Therefore, GOI is adopted as the platform to fabricate the MIR waveguides because the BOX in the SOI substrate can relieve this problem as an isolation layer. Younis et al recently reported the GOI waveguides at 3.682 μm, with a loss of ∼8 dB∕cm [34]. In their following work, the rapid thermal annealing process was used to reduce the loss [35].…”

Section: Review Of Research For Mir Photonics a Platform And Mir Wavmentioning

confidence: 99%

“…Given the large transparency window of 2-14 μm, germanium is a suitable material for the MIR wavelength beyond 8 μm. The MIR waveguides are demonstrated in various germanium-based platforms, such as germanium-on-silicon (GOS) [32,33], germanium-on-SOI (GOI) [34][35][36], and germanium-on-silicon nitride (GOSN) [37]. Other platforms including silicon-on-silicon nitride (SOSN) [38], sapphire-onsilicon (SOS) [39,40], SiGe alloy-on-silicon (SGOS) [41], and aluminum nitride-on-insulator (ANOI) [42] are also explored to demonstrate the MIR photonics devices.…”

Section: Introductionmentioning

confidence: 99%

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Silicon photonic platforms for mid-infrared applications [Invited]

et al. 2017

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Silicon photonic integrated circuits for telecommunication and data centers have been well studied in the past decade, and now most related efforts have been progressing toward commercialization. Scaling up the silicon-oninsulator (SOI)-based device dimensions in order to extend the operation wavelength to the short mid-infrared (MIR) range (2-4 μm) is attracting research interest, owing to the host of potential applications in lab-on-chip sensors, free space communications, and much more. Other material systems and technology platforms, including silicon-on-silicon nitride, germanium-on-silicon, germanium-on-SOI, germanium-on-silicon nitride, sapphireon-silicon, SiGe alloy-on-silicon, and aluminum nitride-on-insulator are explored as well in order to realize low-loss waveguide devices for different MIR wavelengths. In this paper, we will comprehensively review silicon photonics for MIR applications, with regard to the state-of-the-art achievements from various device demonstrations in different material platforms by various groups. We will then introduce in detail of our institute's research and development efforts on the MIR photonic platforms as one case study. Meanwhile, we will discuss the integration schemes along with remaining challenges in devices (e.g., light source) and integration. A few application-oriented examples will be examined to illustrate the issues needing a critical solution toward the final production path (e.g., gas sensors). Finally, we will provide our assessment of the outlook of potential future research topics and engineering challenges along with opportunities.

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Section: Review Of Research For Mir Photonics a Platform And Mir Wavmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Silicon photonic platforms for mid-infrared applications [Invited]

et al. 2017

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“…The measurements show a decreasing trend in the propagation loss with an increase in waveguide width. This can be explained due to the reduction in mode overlap with waveguide sidewalls [32]. However, an abrupt increase in the propagation loss in wider waveguides, i.e., width beyond 7 μm in 0.85 μm thick Ge core and width beyond 3.5 μm in 2 μm thick Ge core, is attributed to the multi-mode excitation.…”

Section: Ge-on-soi Mid-ir Waveguidesmentioning

confidence: 99%

“…Strip waveguides have been developed in Ge-on-SOI, for which the starting SOI substrate has an overlaying Si layer of thickness 220 nm and a buried oxide of thickness 2 μm. The Ge growth process has been reported in [32]. We have prepared two samples of Ge core with thicknesses 0.85 μm and 2 μm in order to assess the loss variation.…”

Section: Ge-on-soi Mid-ir Waveguidesmentioning

confidence: 99%

Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing

et al. 2018

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Silicon-on-insulator is an attractive choice for developing mid-infrared photonic integrated circuits. It benefits from mature fabrication technologies and integration with on-chip electronics. We report the development of SOI channel and rib waveguides for mid-infrared wavelengths centered at 3.7 μm. Propagation loss of ∼1.44 dB/cm and ∼1.2 dB/cm has been measured for TE and TM polarizations in channel waveguides, respectively. Similarly, propagation loss of ∼1.39 dB/cm and ∼2.82 dB/cm has been measured for TE and TM polarized light in rib waveguides. The propagation loss is consistent with the measurements obtained using a different characterization setup and for the same waveguide structures on a different chip. Given the tightly confined single-mode in our 400 nm thick Si core, this propagation loss is among the lowest losses reported in literature. We also report the development of Ge-on-SOI strip waveguides for mid-infrared wavelengths centered at 3.7 μm. Minimum propagation loss of ∼8 dB/cm has been measured which commensurate with that required for high power midinfrared sensing. Ge-on-SOI waveguides provide an opportunity to realize monolithically integrated circuit with on-chip light source and photodetector.

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“…This makes it a suitable silicon photonics material systems for on-chip spectroscopic systems for gas and liquid sensing, monitoring of air or oil quality, control of engine emissions, free-space communication and light detection and ranging (LiDAR) systems [117], [122], [126]. Apart from GOS, there has been a variety of other Germanium-based mid-infrared technology platforms such as Germanium-on-SOI [127]- [129], Germanium-on-Silicon Nitride [130], Si (1−x) Ge x -on-Silicon [131] and suspended Germanium [132], [133]. Figure 4 gives an overview of the various single-mode waveguide cross-sections possible with the different flavours of silicon photonics platforms discussed above.…”

Section: Germanium Based Silicon Photonicsmentioning

confidence: 99%

Open-Access Silicon Photonics: Current Status and Emerging Initiatives

et al. 2018

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Silicon Photonics is widely acknowledged as a gamechanging technology, driven by the needs of datacom and telecom. Silicon Photonics builds on highly capital-intensive manufacturing infrastructure, and mature open-access silicon photonics platforms are translating the technology from research fabs to industrial manufacturing levels. To meet the current market demands for silicon photonics manufacturing, a variety of openaccess platforms is offered by CMOS pilot lines, R&D institutes and commercial foundries. This paper presents an overview of existing and upcoming commercial and non-commercial openaccess silicon photonics technology platforms. We also discuss the diversity in these open-access platforms and their key differentiators.

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Germanium-on-SOI waveguides for mid-infrared wavelengths

Cited by 39 publications

References 11 publications

Silicon photonic platforms for mid-infrared applications [Invited]

Silicon photonic platforms for mid-infrared applications [Invited]

Towards low-loss waveguides in SOI and Ge-on-SOI for mid-IR sensing

Open-Access Silicon Photonics: Current Status and Emerging Initiatives

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