“…By evaluating the dominant dislocations at different temperatures, it was found that the primary dislocation changed from shuffle-set dislocations to glide-set dislocations at this critical temperature. Moreover, the calculated transition temperatures where the shuffle-set dislocation- controlled deformation changed to a glide-set dislocation-controlled deformation (T s−g ) were 1402.6, 676.8, and 560.2 K for diamond, Si, and Ge, respectively, which are comparable to the experimental values, 1450 K for diamond [10], 650 K for Si [1], and 600 K for Ge [13]. At low temperatures, the dislocation motions caused by thermal activation can be ignored.…”