Germanium: a semiconducting platform for spin-orbitronics

Guillet, Thomas; Zucchetti, Carlo; Marchionni, A.; Barbedienne, Quentin; Hallal, Ali; Marty, A.; Vergnaud, C.; Isella, Giovanni; Jaffrès, Henri; Reyren, Nicolas; George, Jean-Marie; Chshiev, M.; Finazzi, Marco; Ciccacci, Franco; Biagioni, Paolo; Masseboeuf, Aurélien; Okuno, Hanako; Bottegoni, Federico; Fert, A.; Jamet, M.

doi:10.1117/12.2567222

Cited by 1 publication

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“…Consequently, MBE growth studies of Bi2Se3 and Bi2Te3 thin films have been carried out on a variety of substrates, e.g., Si(001) and (111), [13] GaN(001), [14] GaAs(001) and (111), [12,15] CdTe(111), [16] SiC(001), [17] as well as on lattice-matched InP(111) [18] and, more recently, Bi2Se3 was grown on Ge(111). [19,20] From a technological point of view, the integration of TIs with long-spindiffusion-length semiconductor materials such as germanium seems to be a very promising solution for the current CMOS (complementary metal-oxide-semiconductor) technology limitations. [21] One of the challenges for monolithic device integration of TIs is their weak bonding to most substrates, originating from the van der Waals (vdW)-type interaction between film and substrate.…”

Section: Takedownmentioning

confidence: 99%

Modification of the van der Waals interaction at the Bi2Te3 and Ge(111) interface

Nawa

Kepaptsoglou

Ghasemi

et al. 2021

Phys. Rev. Materials

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We present a structural and density functional theory study of the interface of the quasi-twinfree-grown three-dimensional topological insulator Bi2Te3 on Ge(111). Aberration-corrected scanning transmission electron microscopy and electron energy-loss spectroscopy in combination with first-principles calculations show that the weak van der Waals adhesion between the Bi2Te3 quintuple layer and Ge can be overcome by forming an additional Te layer at their interface. The first-principles calculations of the formation energy of the additional Te layer show it to be energetically favorable as a result of the strong hybridization between the Te and Ge.

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