The gas-phase interaction of H 3 C-CH 2 -XH 3 and H 2 C=C(H)XH 3 (X ¼ C, Si, Ge) with Ni + has been investigated through the use of high-level density functional theory methods. The structures of the corresponding Ni + complexes were optimized at the B3LYP/6-311G(d,p) level of theory. Final energies were obtained in single-point B3LYP/6-311+G(2df,2p) calculations. In all cases, the most stable complexes are stabilized through agostic-type interactions between the metal cation and the hydrogen atoms of the XH 3 group. Only for propene is the conventional p-complex the global minimum of the potential energy surface. These agostic-type linkages can be viewed as three-center bonds resulting from electron-donor interactions between s bonding orbitals of the neutral and the empty s orbital of the metal and back-donation from pairs of valence electrons of the metal into the corresponding s* antibonding orbitals of the neutral. As a consequence, these bonds are particularly stable for Si-and Ge-containing compounds, because of the high electron-donor ability of the XH 3 group when the heteroatom is Si or Ge. Vinylsilane and vinylgermane lead to non-conventional complexes in which the metal bridges the C a atom of the C=C double bond and one of the hydrogen atoms of the XH 3 group. In contrast with the behavior predicted when the reference acid is Cu + , Si-and Ge-derivatives, both saturated and unsaturated, bind Ni + more strongly than propane and propene, respectively. Ni + binding energies are systematically greater than Cu + binding energies and the bond activation effects observed upon Ni + attachment are sizably larger than those found upon Cu + association.
Computational detailsThe B3LYP density functional theory approach, combined with a 6-311+G(2df,2p) basis set, has been proved to be very