Germanane: A Low Effective Mass and High Bandgap 2-D Channel Material for Future FETs

Chemically functionalized germanene for spintronic devices: a first-principles study

“…[32][33][34][35][36][37] In contrast, the research studies related to the electronic and transport properties of Ge-based nanomaterials, in particular for the chemically functionalized nanostructures, are still lacking. [38][39][40][41][42][43] It is crucial to explore the electronic transport properties of various functionalized germanane-based nanomaterials, which could facilitate the realization of spintronic applications in Ge-based 2D materials. [44][45][46] In this article, we have shown that O-germanene-H is a ferromagnetic metal with a spin efficiency of about 15%, which can be used as a spin-filter nanodevice.…”

High Carrier Mobility and Pronounced Light Absorption in Methyl-Terminated Germanene: Insights from First-Principles Computations

“…As shown in Figure a, the CH 3 – groups bonded to Ge atoms spread alternatively in the up and down sides of Ge bilayer, contributing to the full termination of Ge surface in GeCH 3 . In the case of GeH, there are two possible planar configurations, the chair and boat morphologies . As demonstrated by Ghosh et al, the chair configuration of GeH has both large band gap and low effective mass, which are attractive for switching device applications; however, for GeCH 3 , due to the large steric hindrance of CH 3 –, the boat configuration is excluded and the favorable chair configuration is illustrated in Figure a.…”

“…In the case of GeH, there are two possible planar configurations, the chair and boat morphologies. 29 As demonstrated by Ghosh et al, the chair configuration of GeH has both large band gap and low effective mass, which are attractive for switching device applications; however, for GeCH 3 , due to the large steric hindrance of CH 3 −, the boat configuration is excluded and the favorable chair configuration is illustrated in Figure 1a. The lengths of Ge−Ge and Ge−C bonds are 2.44 and 2.00 Å, respectively.…”

“…Recently, Bianco et al have experimentally obtained single- and few-layer hydrogen terminated germanene, namely germanane (GeH) on SiO 2 /Si surfaces, via a mechanical exfoliation method. , As demonstrated by both theoretical and experimental investigations, GeH is an attractive semiconductor with a direct band gap of ∼1.59 eV and shows low effective mass . Therefore, surface termination with hydrogen turns out to be an effective method in opening a beneficial band gap for germanene without conceding its low effective mass.…”

“…27,28 As demonstrated by both theoretical and experimental investigations, GeH is an attractive semiconductor with a direct band gap of ∼1.59 eV and shows low effective mass. 29 Therefore, surface termination with hydrogen turns out to be an effective method in opening a beneficial band gap for germanene without conceding its low effective mass. The opportune band gap and low effective mass make GeH rather attractive for electronics and optoelectronics; 30 approach.…”