1989
DOI: 10.1051/rphysap:01989002404041900
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Geometrical speciality and special properties of grain boundaries

Abstract: 2014 De tout temps, les utilisateurs des matériaux ont tenté de contrôler leurs microstructures dans le but de leur conférer des propriétés spécifiques pour un emploi donné. C'est de ce point de vue que cet article de synthèse considère les joints de grains, éléments fondamentaux de la microstructure polycristalline, avec deux objectifs : a) tenter d'élucider les relations entre la cristallographie d'un joint de grains, qui détermine sa structure, et différentes propriétés de ce joint ; b) établir la distribut… Show more

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Cited by 45 publications
(22 citation statements)
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“…The published work indicates that, in general, low angle boundaries and boundaries near CSL orientations are more resistant to grain boundary phenomena, particularly those related to mechanical properties. Priester (1989) also arrives at this conclusion, but further concludes that other phenomena (e.g., intergranular diffusion and segregation) depend more on grain boundary structure determined by boundary plane orientation than on boundary misorientation. The CSL model characterizes a grain boundary as a low angle boundary (LAB), a coincident site lattice boundary (CSLB), or a general high angle boundary (GHAB) depending on the relative misorientation between the two crystals adjacent at the boundary (Pumphrey, 1976).…”
Section: Background Grain Boundary Propertiesmentioning
confidence: 67%
“…The published work indicates that, in general, low angle boundaries and boundaries near CSL orientations are more resistant to grain boundary phenomena, particularly those related to mechanical properties. Priester (1989) also arrives at this conclusion, but further concludes that other phenomena (e.g., intergranular diffusion and segregation) depend more on grain boundary structure determined by boundary plane orientation than on boundary misorientation. The CSL model characterizes a grain boundary as a low angle boundary (LAB), a coincident site lattice boundary (CSLB), or a general high angle boundary (GHAB) depending on the relative misorientation between the two crystals adjacent at the boundary (Pumphrey, 1976).…”
Section: Background Grain Boundary Propertiesmentioning
confidence: 67%
“…The importance of knowing GB plane indexes in addition to the misorentation are emphasizes by several researches [4][5][6]. We observed twin GBs in Zn with the same "matrix/twin" correlation and different space orientation demonstrating dissimilar rate of motion (Fig.…”
Section: Introductionmentioning
confidence: 76%
“…As mentioned above, elements such as yttrium and lutetium that were segregated at the grain boundaries of alumina by addition of only 0.05-0.1 mol% Ln 2 O 3 effectively retarded oxygen grain boundary diffusivity, creep deformation and final-stage sintering under uniform environments (Nakagawa et al, 2007, Ikuhara et al, 2002, Yoshida et al, 2002, Watanabe et al, 2003. Retardation of such mass transfer can be explained by a 'siteblocking' mechanism (Amissah et al, 2007, Cheng et al, 2008, Priester, 1989, Korinek et al, 1994 and/or grain boundary strengthening (Yoshida et al, 2002, Buban et al, 2006. Under the oxygen potential gradients used in this study, it was found that oxygen diffusitivity was unaffected by 0.05 mol% lutetia-doping (Matsudaira et al, 2010), and even for 0.2 mol% doping, the retardation was small compared to the effect in uniform environments.…”
Section: Diffusion Species Additivementioning
confidence: 95%
“…On the other hand, rare earth doping can significantly increase the hightemperature creep resistance of polycrystalline alumina (Matsunaga et al, 2003, Ikuhara et al, 2001, Yoshida et al, 2002. Several studies have suggested that segregation of large dopant elements changes the grain boundary environment by 'site blocking' critical oxygen diffusion pathways (Amissah et al, 2007, Cheng et al, 2008, Priester, 1989, Korinek et al, 1994 and/or by strengthening grain boundaries by enhancing bond strengths in the vicinity of dopant ions (Yoshida et al, 2002, Buban et al, 2006). As mentioned above, when undoped polycrystalline alumina wafers were exposed to oxygen potential gradients at high temperatures, the main diffusing species depended on P O2 .…”
Section: Introductionmentioning
confidence: 99%