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2012
DOI: 10.1103/physrevb.86.115323
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Geometrical impact on the optical polarization of droplet epitaxial quantum dots

Abstract: We report on experimental and theoretical investigations of the optical anisotropy of GaAs/AlGaAs quantum dots grown by droplet epitaxy. With in situ annealing in the growth, the shape of quantum dots is systematically controlled from a tall and laterally symmetric shape to a flat and laterally elongated one. Photoluminescence spectroscopy demonstrates an uncommon observation: the more elongated the quantum dots, the lower the degree of linear polarization. Theoretical analysis based on a four-band k • p theor… Show more

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Cited by 25 publications
(50 citation statements)
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“…This formula is expected from the classical "folded down" perturbation approach [1][2][3][4][5][6][7][11][12][13][14]16 . On the other hand, all data points of strained In(Ga)As/GaAs QDs exhibit a denominator ∆ HL that is effectively reduced by δ = 78.6 meV with respect to the class of unstrained GaAs QDs and fall then close to another curve:…”
Section: K · P Analysis Of Atomistic Microscopic Resultsmentioning
confidence: 99%
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“…This formula is expected from the classical "folded down" perturbation approach [1][2][3][4][5][6][7][11][12][13][14]16 . On the other hand, all data points of strained In(Ga)As/GaAs QDs exhibit a denominator ∆ HL that is effectively reduced by δ = 78.6 meV with respect to the class of unstrained GaAs QDs and fall then close to another curve:…”
Section: K · P Analysis Of Atomistic Microscopic Resultsmentioning
confidence: 99%
“…The perturbation potential δV C 2v lowers the QD symmetry to C 2v and hence introduces HH-LH mixing, which modifies the ground hole state HH0 [1][2][3][4][5][6][7][11][12][13][14]16,19,22 ,…”
Section: Discussion Of the Supercoupling Effectmentioning
confidence: 99%
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