Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures

Wang, Leizhi; Yin, Ming; Jaroszyński, J.; Park, Ju‐Hyun; Mbamalu, Godwin; Datta, Timir

doi:10.1063/1.4963261

Cited by 5 publications

(4 citation statements)

References 55 publications

(32 reference statements)

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“…Therefore, the behavior is controlled only by the perpendicular magnetic field, confirming the two dimensional nature of electron transport in this heterostructure [7,14,15]. This is different from the orientation insensitive behavior observed in three-dimensional nanostructures [20,32].…”

Section: Weak Localizationsupporting

confidence: 52%

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Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

et al. 2018

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Charge transport in the wide band gap (Al,In)N/GaN heterostructures with high carrier density ~2 10 were investigated over a large range of temperature (280 mK < T < 280 K) and magnetic field (0 < B < 20 T). We observe the first evidences of weak localization in the two-dimensional electron gas in this system. From the Shubnikov-de Haas (SdH) oscillations a relatively light effective mass of ~0.23m e is determined. Furthermore the linear dependence with temperature (T < 20 K) of the inelastic scattering rate () is attributed to the phase breaking by electron-electron scattering. Also in the same temperature range the less than unit ratio of quantum lifetime than Hall transport time ⁄ 1 is taken to signify the dominance of small angle scattering. Above 20 K, with increasing temperature scattering changes from acoustic phonon to optical phonon scattering, resulting in a rapid decrease in carrier mobility and increase in sheet resistance. Suppression of such scatterings will lead to higher mobility and a way forward to high power and high frequency electronics. I.

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Section: Weak Localizationsupporting

confidence: 52%

“…As shown in the inset of Fig. 1(c), between 20 K and 100 K, the temperature dependence is more pronounced and inverse mobility is directly proportional to temperature, , indicating that acoustic phonon scattering is dominant [2,19,20]. Such temperature dependence is also observed in AlGaN/GaN structures.…”

Section: A Temperature Dependent Electrical Transportmentioning

confidence: 65%

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

et al. 2018

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“…3(a). This violation is ascribed to various aspects of charge conduction mechanism such as the presence of more than one types of charge carrier and different temperature dependence of their mobilities (µ) 17,18,25,26 .…”

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confidence: 99%

Magneto-transport properties of proposed triply degenerate topological semimetal Pd3Bi2S2

Roy

Singha

Satpati

et al. 2018

Applied Physics Letters

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We report transport properties of single-crystalline Pd 3 Bi 2 S 2 , which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological systems, the resistivity shows field-induced metal to semiconductor-like crossover at low temperature. Large, anisotropic and non-saturating magnetoresistance has been observed in transverse experimental configuration. At 2 K and 9 T, the MR value reaches as high as ∼1.1×10 3 %. Hall resistivity reveals the presence of two types of charge carriers and has been analyzed using two-band model. In spite of the large density (> 10 21 cm −3 ), the mobility of charge carriers is found to be quite high (∼ 0.75×10 4 cm 2 V −1 s −1 for hole and ∼ 0.3×10 4 cm 2 V −1 s −1 for electron). The observed magneto-electrical properties indicate that Pd 3 Bi 2 S 2 may be a new member of the topological semimetal family, which can have a significant impact in technological applications.Topology protected electronic properties of materials have opened up a new arena of research in modern condensed matter physics 1-7 . These novel materials have generated immense research interest in fundamental physics of low-energy relativistic particles. In highenergy physics, the relativistic fermions are protected by Poincare symmetry, while in condensed matter, they respect one of the 230 space group symmetries (SGs) of the crystal. The variation of crystal symmetry from one material to another escalates the potential to explore free fermionic excitations such as Dirac, Weyl, Majorana and beyond. Besides fundamental interest, the discovery of topological insulators 1,2 , 3D Dirac and Weyl semimetals 3,4 , and Majorana fermions in superconducting heterostructures 5-7 have planted the seed of technological revolution in research and development of electronic devices. Fabrication of fast electronic devices, spintronics applications and fault tolerant quantum computing are the few among the several specific topics of interest. So, the prediction and experimental realization of new materials, which host such quasi-particle excitations, can have significant impact on paradigm shifting in technological application.Very recently, Bradlyn et al. 8 have predicted the existence of exotic fermions near the Fermi level in several materials, governed by their respective space group symmetry. Unlike two-and four-fold degeneracy in 3D Weyl/Dirac semimetals, these systems exhibit three-, six-, and eight-fold degenerate band crossing at high symmetry points in the Brillouin zone. It has been proposed that Pd 3 Bi 2 S 2 with space group 199 hosts three-fold degenerate fermion as the quasi-particle excitation due to the three-band crossing at the high symmetry P point, which is just 0.1 eV above the Fermi level 8 . So far, no magnetotransport experiment has been done on this material. The results are important not only for the fundamental research but also to manipulate them in technological application. In the present work, we have synthes...

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“…For the modeling a 2D network of linear, Ohmic resistors (see Figure a) was used, that was carefully crafted on the basis of the DW's inclination angle distribution. Resistor networks (RN) have already been applied impressively for modeling a broad variety of different electronic transport scenarios, such as topological Kondo‐Insulators, manganite thin films upon Mott phase transitions, as well as the currents flowing in disordered semiconductors, in composite materials, or in low‐dimensional nanostructures like graphene or single‐stranded DNA molecules…”

Section: Methodsmentioning

confidence: 99%

Resistor Network Modeling of Conductive Domain Walls in Lithium Niobate

Wolba

Seidel

Cazorla

et al. 2017

Adv Elect Materials

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devices, [10] and the fundamental inspection by theory and experiment.While ferroelectrics constitute wideband gap semiconductors with good insulating properties, their DWs may possess a significantly increased electrical conductivity, as is of central focus in the work here. This so-called domain wall conductivity (DWC) has been reported first for multiferroic bismuth ferrite [11] and lead-zirconate-titanate [12] thin films, followed by research on (improper) erbium manganite [13] and barium titanate [14] bulk ferroelectric crystals. DWC in lithium niobate (LiNbO 3 :LNO) so far was reported to happen under photoexcitation only. [15,16] However, recent experiments by Godau et al. [17] on LNO single crystals (sc) have shown that reshaping the DW to larger inclination angles by applying a dedicated electrical tuning protocol enhances DWC by 3-4 orders of magnitude, and gives rise to DW currents in the upper µA range at room temperature and in the dark.Theoretical approaches applied to explain the increased DWC in these materials include phenomenological Landau [18] and Landau-Ginzburg-Devonshire theory, [19] and more recently also the combination of quantum mechanics with phenomenological Landau theory. [20] All these microscopic theories aim at predicting and quantifying the relevant local-scale domain wall parameters, i.e., the DW formation energy, the free charge distribution, and the DW conductivity. Nevertheless, it is difficult to compare the outcomes of such microscopic theories directly to experimental data, as the latter generally is based on macroscopic quantities. In contrast, our resistor network (RN) approach provides a clue link to experiments, in spite of being nonpredictive (i.e., as it requires some initial experimental input). Hence, our results can be directly compared to the local currents flowing within the DW as measured for instance by conductive atomic force microscopy (cAFM). The simple picture of a RN thus elegantly complements the microscopic theories of DWC. MethodsFor the modeling a 2D network of linear, Ohmic resistors (see Figure 1a) was used, that was carefully crafted on the basis of the DW's inclination angle distribution. Resistor networks (RN) have already been applied impressively for modeling a Here the concept of a 2D resistor network (2D RN) is applied in order to model the electrical conductivity along sheet-like domain walls (DWs) in single crystalline lithium niobate (sc-LNO). The only input to the RN modeling approach is the DW inclination angle distribution, as measured previously with respect to the polar c-axis. The simulations then show that a 2D network of Ohmic resistors not only adequately accounts for the different boundary conditions envisaged in experiments, but equally well provides a direct link between the local domain wall conductivity (DWC) and the DW inclination angle α. Moreover, the RN simulations can be directly compared to local-scale transport measurements, as obtained by scanning probe techniques. The conceptual simplicity and the low computational e...

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Geometric dependence of transport and universal behavior in three dimensional carbon nanostructures

Cited by 5 publications

References 55 publications

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Scatterings and Quantum Effects in (Al,In)N/GaN Heterostructures for High-Power and High-Frequency Electronics

Magneto-transport properties of proposed triply degenerate topological semimetal Pd3Bi2S2

Resistor Network Modeling of Conductive Domain Walls in Lithium Niobate

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