10-20 lm; whereas in the dielectric quasi-TEM mode, the field penetrates through the Si substrate. In the slow-wave mode, the electric field extends all the way down to the substrate but orders of magnitude smaller than in the SiO2 layer. This implies that less electrical energy penetrates into silicon. In our numerical simulation, we show that in the skin-effect mode, the electric field in the metal layer is concentrated close to the Al-SiO2 interface with a skin depth of less than 1 lm for our case. In the other two modes, the electric field is distributed more evenly in the metal layer. REFERENCES 1. H. Hasegawa, M. Furukawa, and H. Yanai, Properties of microstrip line on Si-SiO2 system, IEEE Trans Microwave Theory Tech MTT-19 (1971), 869-881. 2. T. Shibata and E. Sano, Characterization of MIS structure coplanar transmission lines for investigation of signal propagation in integrated circuits, IEEE Trans Microwave Theory Tech 38 (1990),ABSTRACT: A new approach to obtain ultra-flattened-chromaticdispersion-optical-fibers by introducing a small airhole at the core of a conventional step-index-optical-fiber is presented. The proposed structure exhibits a simple geometry and has been analyzed through a vectorial finite element method in conjunction with genetic algorithm. The structure parameters are optimized using genetic algorithm to obtain ultra wideband residual dispersion compensation. Numerical results show that the optimized model exhibits flattened negative dispersion over E þ S þ C þ L þ U wavelength bands with an average dispersion of À253 ps km À1 nm À1