Generic robust LVCMOS-compatible control logic for GaAs HEMT switches

Abstract

-Robust digital control logic for a X-band fivebit digital attenuator and six-bit phase shifter has been developed and tested. The circuit uses an innovative combination of feedback and feed forward. The devices have been developed in the 6-inch 0.5 μm power pHEMT process (PP50-10) of WIN Semiconductors. The use of this process results in cost effective devices with a high power capability.

A cost-effective high-power s-band 6-bit phase shifter with integrated LVCMOS control logic

“…The design of this control logic is discussed in detail in [4]. For the current design the off-voltage has been lowered from -3 to -5 V. For a proper working the supply voltage of this circuit had to be changed to -10 V. IV.…”

mm-Wave Low Insertion Loss SIW Phase Shifter Based on Liquid Metal Technology

“…The typical IL for a state-of-the-art CMOS based active phase shifter is much higher than 10 dB at Ka-band frequencies [1]- [4]. PIN diodes and GaAs FETs are widely used in phase shifters [5]- [6]. However, designs using GaAs FETs have limited radio frequency (RF) power handling capability [5].…”

“…PIN diodes and GaAs FETs are widely used in phase shifters [5]- [6]. However, designs using GaAs FETs have limited radio frequency (RF) power handling capability [5]. Designs using PIN diodes have higher RF power handling capability, but they have relatively high IL [6].…”