Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

Goiffon, Vincent; Cervantes, Paola; Virmontois, Cédric; Corbière, Franck; Magnan, Pierre; Estribeau, Magali

doi:10.1109/tns.2011.2171502

Cited by 26 publications

(14 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…By doing so, the onset of the dark current draining mechanism would not rely on the STI inversion anymore and thus, it would not be dependent on the TID nor on the annealing history of the irradiated sensor anymore. Such a pixel design has already been manufactured, irradiated and studied in the past (ELD design in [21]), but the biasing conditions that enables the dark current reduction mechanism was not explored at that time. Hence, future work could focus on studying the dark current draining mechanism in such design to potentially increase its effectiveness.…”

Section: B Possibilities For Pixel Design Improvementsmentioning

confidence: 99%

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Goiffon¹,

Rizzolo²,

Corbière³

et al. 2018

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

Abstract-Total Ionizing Dose (TID) effects are studied on a radiation hardened by design (RHBD) 256x256-pixel CMOS image sensor (CIS) demonstrator developed for ITER remote handling by using X and γ-rays irradiations. The (color) imaging capabilities of the RHBD CIS are demonstrated up to 10 MGy(SiO2), 1 Grad(SiO2), validating the radiation hardness of most of the designed integrated circuit. No significant sensitivity (i.e. responsivity and color filter transmittance) or readout noise degradation is observed. The proposed readout chain architecture allows achieving a maximum output voltage swing larger than 1 V at 10 MGy(SiO2). The influence of several pixel layout (the gate oxide thickness, the gate overlap distance and the use of an in-pixel P+ ring) and manufacturing process parameters (photodiode doping profile, process variation) on the radiation induced dark current increase is studied. The nature of the dark current draining mechanism used to cancel most of the radiation induced degradation is also discussed and clarified.

show abstract

Section: B Possibilities For Pixel Design Improvementsmentioning

confidence: 99%

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Goiffon¹,

Rizzolo²,

Corbière³

et al. 2018

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

show abstract

“…This can be achieved with the so-called gated diodes [31][32][33]. The increase of such a current can be mitigated by changing the diode layout and avoiding thick oxide at the diode edges.…”

Section: Radiation Hardening By Designmentioning

confidence: 99%

Technology Needs for Modular Pixel Detectors

Guerrini¹

2017

Analog Electronics for Radiation Detection

View full text Add to dashboard Cite

“…2) Photodiode layout variations: In this section, the case of hardened photodiode designs is discussed. The matrix used is described in [20]. It contains photodiodes of several types: standard, recessed oxides, surrounded with a P+ doping profile or a gate (grounded).…”

Section: Design Variationsmentioning

confidence: 99%

Single-Event Effects in CMOS Image Sensors

Lalucaa

Goiffon

Magnan

et al. 2013

IEEE Trans. Nucl. Sci.

View full text Add to dashboard Cite

In this work, 3T Active Pixel Sensors (APS) are exposed to heavy ions (N, Ar, Kr, Xe), and Single Event Effects (SEE) are studied. Devices were fully functional during exposure, no Single Event Latch-up (SEL) or Single Event Functional Interrupt (SEFI) happened. However Single Event Transient (SET) effects happened on frames: line disturbances, and half or full circular clusters of white pixels. The collection of charges in cluster was investigated with arrays of two pixel width (7 and 10 µm), with bulk and epitaxial substrates. This paper shows technological and design parameters involved in the transient events. It also shows that STARDUST simulation software can predict cluster obtained for bulk substrate devices. However, the discrepancies in epitaxial layer devices are large-which shows the need for an improved model.

show abstract

Generic Radiation Hardened Photodiode Layouts for Deep Submicron CMOS Image Sensor Processes

Cited by 26 publications

References 25 publications

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Total Ionizing Dose Effects on a Radiation-Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling

Technology Needs for Modular Pixel Detectors

Single-Event Effects in CMOS Image Sensors

Contact Info

Product

Resources

About