Generic Carrier-Based Core Model for Undoped Four-Terminal Double-Gate MOSFETs Valid for Symmetric, Asymmetric, and Independent-Gate-Operation Modes

Compact model and circuit simulations for asymmetric, independent gate FinFETs

“…The analytical expression for the drain current of the independent gate asymmetric FinFET is given in [18] and is easily brought into a form similar to that in [15]. However, explicit expressions for the terminal charges have not been derived.…”

Comparison and improvement of two core compact models for double-gate MOSFETs

“…For an undoped DG MOSFET, both Shangguan et al model [12] and Liu et al model [13] give the solution of the Poisson equation (Eq. (1) in [13]).…”

“…(1) in [13]). However, the two different solution forms can be transformed into each other by rearrangement.…”

“…Recently, a surface-potential solution for generic undoped MOSFETs with two gates is proposed by Shangguan et al [12]. Moreover, Liu et al have presented a generic carrier-based core model for undoped DG MOSFETs [13]. This paper will first compare the two generic models reported by Shangguan et al [12] and Liu et al [13] from the aspect of formulation.…”

“…Moreover, Liu et al have presented a generic carrier-based core model for undoped DG MOSFETs [13]. This paper will first compare the two generic models reported by Shangguan et al [12] and Liu et al [13] from the aspect of formulation. Then the computational efficiency of the model is improved based on the Jacobian Newton method with a universal initial guess.…”