Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Sah, C. T.; Jie, B.B.

doi:10.1109/icsict.2006.306098

Cited by 7 publications

(4 citation statements)

References 25 publications

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“…It should be noted that the back-gate voltage at peak current (V BG-peak ) shifts slightly to the low back-gate voltage as the voltage of PN junction increases. The results are consistent with the simulation results in the previous work [32].…”

Section: Resultssupporting

confidence: 93%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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This paper investigates the effect of total ionizing dose radiation on back-gate interface traps in SOI NMOSFETs. The concentration and energy distribution of interface traps at Si/SiO 2 back-gate interface of SOI NMOSFETs during irradiation are studied by the direct-current current-voltage technique. When transistors are subjected to radiation, DCIV bulk current increases. The calculated results suggest that the interface trap density increases and its equivalent energy level is far away from the midgap with irradiation dose increasing, which can be explained by the energy distribution of interface traps. The interface trap energy density D IT (E IT ) as a function of the energy level E IT has been obtained by the least square optimization and shows the typical ''U-shape'' distribution. In detail, the rising humps at equivalent energy level in D IT (E IT ) curves are due to Si-H bonds that are broken down after irradiation, which corresponds to the increasing trap density. Moreover, it is found that the energy level of interface traps is redistributed after irradiation. The peak of humps in D IT (E IT ) curves occurs at the farther energy level with the increase of dose, which is similar to the equivalent energy level. It might arise from the shallow energy level of interface traps induced by radiation.INDEX TERMS SOI, interface traps, radiation, energy distribution.

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Section: Resultssupporting

confidence: 93%

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

et al. 2019

IEEE Access

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“…The DCIV technique is used to characterize the interface trap density by detecting the recombination current associated with the interface traps based on Shockley-Read-Hall steady-state recombination kinetics [9,19,20]. When an appropriate voltage is applied to the back gate, the back channel will be depleted totally and the electrons and holes near the interface traps at the back interface will be adequate.…”

Section: Introductionmentioning

confidence: 99%

“…When an appropriate voltage is applied to the back gate, the back channel will be depleted totally and the electrons and holes near the interface traps at the back interface will be adequate. The recombination rate of interface traps will reach the maximum and the density of interface traps will be calculated according to the SRH recombination theory [19][20][21]. In this paper, based on the DCIV method, the radiation characteristics of SOI NMOSFETs with different process conditions are investigated.…”

Section: Introductionmentioning

confidence: 99%

Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions

Zeng

et al. 2021

Electronics

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As a promising candidate in space radiation hardened applications, silicon-on-insulator (SOI) devices face the severe problem of total ionizing dose (TID) radiation because of the thick buried oxide (BOX) layer. The direct-current current–voltage (DCIV) method was applied for studying TID radiation of SOI metal–oxide–semiconductor field–effect transistors (MOSFETs) with different manufacture processes. It is found that the peak of high-voltage well (PX) devices shows a larger left-shift and a slower multitude increase along with radiation dose, compared with that of low-voltage well (PV) devices. It is illustrated that the high P-type impurity concentration near back interface makes it more difficult to break up silicon hydrogen bonds, which gives the PX devices superiority in resisting the build-up of interface traps. The study results indicate that increasing doping concentration of the body region near the back-gate interface might be an alternative radiation hardening technique of SOI MOSFET devices to avoid the parasitic back transistors’ leakage.

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“…It is generally believed that low frequency noise of MOSFETs originates from capture/release of charge carriers by oxide traps which have relatively deep energy levels and long time constants [70]. Sah and Jie [71] recently suggested that with the presence of the oxide traps or interface states at energy levels close to conduction or valence band edges, gigahertz noise could be generated from carrier transitions between these interface traps/states and the conduction or valence bands. A similar point was also addressed by Pantisano and…”

Section: Introductionmentioning

confidence: 99%

High frequency noise in deep-submicrometer silicon mosfets

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Generation-Recombination-Trapping at Interface Traps In Compact MOS Transistor Modeling

Cited by 7 publications

References 25 publications

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Effect of Radiation on Interface Traps of SOI NMOSFETs by the Direct-Current Current-Voltage Technique

Applications of Direct-Current Current–Voltage Method to Total Ionizing Dose Radiation Characterization in SOI NMOSFETs with Different Process Conditions

High frequency noise in deep-submicrometer silicon mosfets

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