Generation–recombination reduction in InAsSb photodiodes

Abstract

Generation-recombination processes in a narrow band gap active region of infrared photodiodes are studied theoretically and experimentally. Thanks to an analysis of the transport in InAsSb photodiodes as a function of temperature, we demonstrate that these processes can be reduced by controlling the doping of the active region. The first Auger-dominated detector in this spectral range is shown, with negligible diffusion and SRH generation-recombination processes. This leads to the highest detectivity ever reported for a high-temperature antimonide-based detector in this spectral range: D * = 2.5 × 10 10 cm Hz 1/2 W −1 at 250 K and 1.3 × 10 11 cm Hz 1/2 W −1 at 180 K and λ = 3.39 µm.

Growth of InAsSb/InPSb heterojunctions for mid-IR detector applications

“…The room-temperature R 0 A products (Table 1) of the devices with a wider bandgap InPSb barrier layer show some improvement over the InAsSb homojunction devices. These values are comparable to the previously reported data [11,12] for InAsSb photodetectors with AlInAsSb barrier layers. The dependence of the room-temperature zero-bias resistance of InPSb/InAsSb diodes on device size is plotted in Fig.…”

InAsSb and InPSb materials for mid infrared photodetectors

“…The growth of InAsSb based detectors has been reported recently by several groups using molecular beam epitaxy. [14,15] In the present work, mesa diode structures were fabricated consisting of a top p-type contact layer of either InAsSb or InPSb (~10 17 cm -3 ), following by an non intentionally doped (nid) 1µm absorption layer of InAsSb grown on an n + GaSb substrate. Typically measurements were performed via top side contacts placed on the mesa (p-contact) or on the exposed n + GaSb substrate (ncontact).…”

Mid-infrared optical upconversion by integrating an InAsSb photodetector with a GaAs light emitting diode

“…The external upconversion efficiency was measured to be 0.06 W/W at 2.85 µm. Further study on improving the InAsSb photodetector structures is under way and is expected to minimize the Shockley-Read Hall (SRH) recombination centers [5] in the middle of the band gap and thus achieve higher temperature and higher efficiency operation. a2888_1.pdf…”

“…The addition of As to the InSb compound material, yielding InAsSb ternary, slightly increases the band gap and consequently decreases the maximum detectable wavelength to below 5 µm. Nevertheless, the detector maintains the same excellent detectivity of an InSb infrared photodetector at much higher temperatures [4]- [5], which are attainable through a thermal-electrical cooler. This enhancement will have profound impacts on the thermal imaging devices in the 3-5 µm range for high performance, easy implementation and low cost thermal imaging camera.…”