Generation of Terahertz radiation with two color semiconductor lasers

Hoffmann, Stefan; Hofmann, Martin R.

doi:10.1002/lpor.200710004

Cited by 43 publications

(23 citation statements)

References 66 publications

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“…Whereas this multi-mode operation is undesirable in many cases where one ideally prefers an efficient conversion of the excited carriers into a single-mode laser field, the welldefined emission at two laser modes is needed, e.g., in cases where difference frequency generation is exploited to generate light in the terahertz spectral range [1,2]. Experimentally, such two-color operation has been observed not only in semiconductor QW lasers using spectrally filtered mirror feedback [1], but also in a traditional vertical external cavity surface emitting laser (VECSEL) system [2].…”

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confidence: 99%

Non‐equilibrium analysis of the two‐color operation in semiconductor quantum‐well lasers

Bäumner

Koch

Moloney

2010

Physica Status Solidi (b)

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The relevance of hole burning for stable two-color operation in semiconductor quantum-well lasers is studied using a nonequilibrium laser model on the basis of the semiconductor Maxwell-Bloch equations. The field propagation is described via a traveling-wave method. The polarization dynamics is computed using the semiconductor Bloch equations for the microscopic transition and occupation probabilities. Numerical examples for single-and dual-mode operation are presented for a microresonator model system.

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confidence: 99%

Non‐equilibrium analysis of the two‐color operation in semiconductor quantum‐well lasers

Bäumner

Koch

Moloney

2010

Physica Status Solidi (b)

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“…A common approach involves photomixing the output of multi−wavelength ECLs [76], and in this respect, tunable QD lasers can offer some advantages by affording broader spectral flexibility and allowing for wider spectral separation of the multiple wavelengths. One such system utilized a double−Littman configuration ECL [46], achieving a maximum wavelength separation of 126 nm for dual lasing, which represents over 25 THz in frequency difference.…”

Section: Applicationsmentioning

confidence: 99%

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

White

Cataluna

2015

Photonics

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Wavelength−tunable semiconductor quantum−dot lasers have achieved impressive performance in terms of high−power, broad tunability, low threshold current, as well as broadly tunable generation of ultrashort pulses. InAs/GaAs quantum−dot−based lasers in particular have demonstrated significant versatility and promise for a range of applications in many areas such as biological imaging, optical fiber communications, spectroscopy, THz radiation generation and frequency doubling into the visible region. In this review, we cover the progress made towards the development of broadly−tunable quantum−dot edge−emitting lasers, particularly in the spectral region between 1.0-1.3 µm. This review discusses the strategies developed towards achieving lower threshold current, extending the tunability range and scaling the output power, covering achievements in both continuous wave and mode−locked InAs/GaAs quantum−dot lasers. We also highlight a number of applications which have benefitted from these advances, as well as emerging new directions for further development of broadly−tunable quantum−dot lasers.

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“…In contrast to the mentioned techniques, the double-grating external-cavity diode laser configuration [18][19][20] can offer dual-color laser operation with a broadly-tunable mode separation limited only by the spectral bandwidth of its gain element. The highlighted concepts of a dual-wavelength generation are of special interest for a number of applications ranging from biophotonics and wavelength division multiplexing, where the channels of information are encoded on light signals of different wavelengths, to nonlinear frequency conversion, particularly to the visible spectral range by second harmonic generation [21] and to the terahertz region [22] by difference frequency-driven photomixer devices. In this respect, semiconductor lasers, and InAs/GaAs quantum-dot (QD) lasers in particular, with their small size, high efficiency, reliability and low cost can offer broad near-infrared (1 -1.3 µm) wavelength coverage and wide tunability [23,24] T simultaneously [20].…”

Section: Introductionmentioning

confidence: 99%

Compact All-Quantum-Dot-Based Tunable THz Laser Source

Fedorova

Gorodetsky

Rafailov

2017

IEEE J. Select. Topics Quantum Electron.

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Abstract-We demonstrate an ultra-compact, roomtemperature, tunable terahertz (THz) generating laser source based on difference-frequency-driven photomixing in a coplanar stripline InAs/GaAs quantum-dot (QD) antenna pumped by a broadly-tunable, high-power, continuous wave InAs/GaAs QD laser diode in the double-grating quasi-Littrow configuration. The dual-wavelength QD laser operating in the 1150 nm -1301 nm wavelength region with a maximum output power of 280 mW and with tunable difference-frequency (277 GHz -30 THz) was used to achieve tunable THz generation in the QD antenna with a photoconductive gap of 50 µm. The best THz output performance was observed at pump wavelengths around the first excited state of the InAs/GaAs QDs (~1160nm), where a maximum output power of 0.6 nW at 0.83 THz was demonstrated.

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Generation of Terahertz radiation with two color semiconductor lasers

Cited by 43 publications

References 66 publications

Non‐equilibrium analysis of the two‐color operation in semiconductor quantum‐well lasers

Non‐equilibrium analysis of the two‐color operation in semiconductor quantum‐well lasers

Unlocking Spectral Versatility from Broadly−Tunable Quantum−Dot Lasers

Compact All-Quantum-Dot-Based Tunable THz Laser Source

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