Generation of squeezed states by holography

Liu, Shangqing; Chen, Yansong

doi:10.1364/josab.12.000829

Cited by 11 publications

(1 citation statement)

References 4 publications

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“…Zero bias external quantum efficiencies of 23%, 16% and 2.8% have been obtained at 850, 1298 and 1552 nm, respectively. In addition to the high efficency of Ge-on-Si diodes, Liu et al has shown that local strain introduction could shift the band edge of the Ge film from 1550 nm (0.80 eV) to 1605 nm (0.77 eV) that enhance the responsivity of such devices [51] in the upper L-band.…”

Section: Ge-based Photodetectorsmentioning

confidence: 99%

Review of Some Critical Aspects of Ge and GeOI Substrates

et al. 2006

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The challenges posed by the scaling of Silicon (Si) devices make mandatory the study of new materials to overcome the physical limitations of the Si. Germanium (Ge) was actually used in the first transistors but was then abandoned in favour of Si due to difficulties in processing Ge Oxide. However, the introduction of high-K gate dielectrics makes the use of Ge possible in an advanced technology. Its benefits for MOSFET applications are important: better transport properties than with Silicon hence higher saturation currents; lower band gap hence lower supply voltages and lower power dissipation and a lattice parameter compatible with Gallium Arsenide (GaAs) epitaxy. These are the main reasons why, during the last 4 years, the interest in Ge and Ge-On-Insulator (GeOI) substrates fabrication and properties has grown. This paper is a review of the different types of Ge and GeOI substrates, their critical aspects and their new potential applications.

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Section: Ge-based Photodetectorsmentioning

confidence: 99%

Review of Some Critical Aspects of Ge and GeOI Substrates

et al. 2006

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Ionization of a model quantum system by a single mode electromagnetic cavity field

Тихонова¹,

Popov²

2005

Laser Phys. Lett.

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Abstract:The ionization of a model atom in a strong singlemode non-classical electromagnetic field is studied beyond the perturbation approach using the model of "one discrete level + continuum" for the atom. Explicit analytical expressions for the time-dependent probability of atomic ionization are obtained for different initial states of radiative field: Fock state, coherent wave packet, squeezed vacuum state. The results are compared to the ionization decay of discrete atomic level in a classical light field, and are analyzed for different mean number of radiative photons. The time-dependent distribution of the quantized field over photon number states is examined. The time-dependent bound atomic probability calculated in the case of different initial field states (Fock, coherent, and squeezed vacuum states). The mean number of photons is equal to unity

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Features of multiphoton-stimulated bremsstrahlung in a quantized field

Burenkov¹,

Тихонова²

2010

J. Phys. B: At. Mol. Opt. Phys.

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The process of absorption and emission of external field quanta by a free electron during the scattering on a potential centre is investigated in the case of interaction with a quantized electromagnetic field. The analytical expression for differential cross-sections and probabilities of different multiphoton channels are obtained. We demonstrate that in the case of a non-classical ‘squeezed vacuum’ initial field state the probability for the electron to absorb a large number of photons appears to be larger by several orders of magnitude in comparison to the classical field and leads to the formation of the high-energy plateau in the electron energy spectrum. The generalization of the Marcuse effect to the case of the quantized field is worked out. The total probability of energy absorption by electron from the non-classical light is analysed.

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Generation of squeezed states by holography

Cited by 11 publications

References 4 publications

Review of Some Critical Aspects of Ge and GeOI Substrates

Review of Some Critical Aspects of Ge and GeOI Substrates

Ionization of a model quantum system by a single mode electromagnetic cavity field

Features of multiphoton-stimulated bremsstrahlung in a quantized field

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