Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation

Murzakhanov, Fadis F.; Mumdzhi, I. E.; Mamin, G. V.; Yusupov, R. V.; Davydov, V. Yu.; Смирнов, А. Н.; Muzafarova, M. V.; Nagalyuk, S. S.; Soltamov, V. A.

doi:10.1134/s1063783422050067

Cited by 4 publications

(2 citation statements)

References 32 publications

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“…Among the large variety of defects possessing ODMR, only one defect in the form of a negatively charged boron vacancy (V B – ) has been shown to be controllably and reproducibly generated in the hBN host ,,− and its microscopic origin is well understood and established by means of rigorous ESR spectroscopy and calculations based on the density functional theory. ,, The structure of the V B – defect is schematically shown in Figure a as a missing boron atom having three nitrogen atoms as the nearest neighbors. ,, The basic spin properties of the defect are summarized in Figure b. The spin-triplet ( S = 1) ground state of the defect is already split in zero magnetic field ( D ≅ 3.6 GHz) giving rise to the corresponding energy separation of the m S = 0 and m S = ±1 spin sublevels known as the zero-field splitting (ZFS).…”

Section: Introductionmentioning

confidence: 99%

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

et al. 2023

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The concept of optically addressable spin states of deep-level defects in wide band gap materials is successfully applied for the development of quantum technologies. Recently discovered negatively charged boron vacancy defects (V B − ) in hexagonal boron nitride (hBN) potentially allow a transfer of this concept onto atomic-thin layers due to the van der Waals nature of the defect host. Here, we experimentally explore all terms of the V B − spin Hamiltonian reflecting interactions with the three nearest nitrogen atoms by means of conventional electron spin resonance and high frequency (94 GHz) electron−nuclear double resonance. We establish symmetry, anisotropy, and principal values of the corresponding hyperfine interaction (HFI) and nuclear quadrupole interaction (NQI). The HFI can be expressed in the axially symmetric form as A ⊥ = 45.5 ± 0.9 MHz and A ∥ = 87 ± 0.5 MHz, while the NQI is characterized by quadrupole coupling constant C q = 1.96 ± 0.05 MHz with slight rhombisity parameter η = (P xx − P yy )/P zz = −0.070 ± 0.005. Utilizing a conventional approach based on a linear combination of atomic orbitals and HFI values measured here, we reveal that almost all spin density (≈84%) of the V B − electron spin is localized on the three nearest nitrogen atoms. Our findings serve as valuable spectroscopic data and direct experimental demonstration of the V B − spin localization in a single two-dimensional BN layer.

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Section: Introductionmentioning

confidence: 99%

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

et al. 2023

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“…The negatively charged boron vacancy with an S = 1 triplet spin state is one of the most well-studied and understood color centers in hBN. This defect can be created by electron [16], proton [17], neutron [18] or ion irradiation of the crystal [19], and possesses photoluminescence in the IR range (λ em ≈ 800 nm). The microscopic model of this defect (figure 1(a)) has been previously established through electron paramagnetic resonance (EPR) [16,18], optically detected magnetic resonance methods [18,20], and density functional theory studies [21].…”

Section: Introductionmentioning

confidence: 99%

Exploring the properties of the VB− defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation

Murzakhanov,

Sadovnikova,

Gracheva

et al. 2024

Nanotechnology

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Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap Eg = 6 eV, containing a negatively charged boron vacancy (VB-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of VB- spin polarization under optical pumping with λext = 532 nm laser using high-frequency (νmw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P ≈ 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30‑40 µs, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding the spin properties of boron vacancy.

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Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

Iwański,

Kierdaszuk,

Ciesielski

et al. 2024

Diamond and Related Materials

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Generation of Optically Addressable Spin Centers in Hexagonal Boron Nitride by Proton Irradiation

Cited by 4 publications

References 32 publications

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

Symmetry of the Hyperfine and Quadrupole Interactions of Boron Vacancies in a Hexagonal Boron Nitride

Exploring the properties of the VB− defect in hBN: optical spin polarization, Rabi oscillations, and coherent nuclei modulation

Manipulating carbon related spin defects in boron nitride by changing the MOCVD growth temperature

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