Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-Thyristors

Сліпченко, С. О.; Podoskin, A. A.; Soboleva, O. S.; Veselov, D. A.; Zolotarev, V. V.; Pikhtin, N. A.; Bagaev, T. A.; Ладугин, М. А.; Маrmalyuk, А. А.; Симаков, В. А.; Tarasov, I. S.

doi:10.1109/ted.2016.2582700

Cited by 9 publications

(4 citation statements)

References 12 publications

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“…The high-power laser-thyristor (LT) under study is a new semiconductor device epitaxially combining a stripe-geometry laser diode and an n-p-n transistor serving as a photoinitiated current switch (n-collector of the phototransistor part is the N-emitter for the laser diode) [11,12]. A distinctive feature of the device is the low control current density in the range from several to hundreds of A/cm 2 , which provides switch-on of pumping pulses for the laser part, with amplitude of tens of amperes and width of tens of nanoseconds [13,14].…”

Section: Introductionmentioning

confidence: 99%

“…The general physical principles of operation of the laserthyristor can be described in terms of a simple model considering the laser-thyristor as a phototransistor-laser diode optoelectronic couple [11][12][13][14][15] with three electrical contacts: anode, cathode and control contact formed in the collector of the phototransistor (figure 1(a)). Current pulses and highpower laser pulses are generated with a circuit, in which a DC voltage is applied from an external source to the LT and to an in parallel connected capacitor.…”

Section: Introductionmentioning

confidence: 99%

“…At this concentration the LT is turned-on as a result of the positive feedback and the external control can be switched off [13]. The higher the control current leads to the faster the accumulation of the critical concentration of excess carriers in the p-base and the shorter the LT turn-on delay [14]. The turn-on delay also becomes shorter as the blocking voltage is raised at fixed control current amplitude.…”

Section: Introductionmentioning

confidence: 99%

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Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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The turn-on dynamics and energy efficiency of control over low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors emitting at a wavelength of 905 nm have been experimentally studied in various control modes: (i) optical activation of the p-GaAs base with external light at a wavelength of 1068 nm and (ii) standard mode of control with pulsed current. It was shown that the turn-on of low-voltage lasers-thyristors by long-wavelength light with photon energy lower than the energy gap width of the p-GaAs base occurs via activation of deep levels. It was demonstrated that, for low-voltage lasers-thyristors with maximum blocking voltage of up to 12 V, the turn-on delay times under optical and electrical activation fall in the range 50-1200 ns. Under optical control by external source at a wavelength of 1068 nm, amplitude of optical power introduced into the p-GaAs base reached a value of 300 mW, and the energy absorbed in the p-GaAs base during the control pulse was 30-40 fJ. In the case of the electrical control, the control current density was as high as 20 A cm −2 , and the energy absorbed in the p-GaAs base during the control pulse was 43-47 pJ.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Gavrina¹,

Podoskin²,

Romanovich³

et al. 2019

Semicond. Sci. Technol.

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“…В предельном (идеальном) случае данные дискретные компоненты должны иметь интегральное исполнение. Подобная возможность была реализована в структурах низковольтных лазер-тиристоров, например, в [4]. Были продемонстрированы возможности создания мощных импульсных источников для спектрального диапазона в районе 900 nm, реализованные на основе многопереходных гетероструктур AlGaAs/InGaAs/GaAs.…”

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Низковольтные гетеротиристоры InP для генерации импульсов тока длительностью 50-150 ns

Слипченко¹,

Подоскин²,

Гаврина³

et al. 2023

Письма В Журнал Технической Физики

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Current switches based on low-voltage InP heterothyristors with a maximum blocking voltage of 20V were developed and studied. In current pulse generation mode, the efficient operation of InP heterothyristors with a low-resistance load in the form of a capacitor was demonstrated. It has been shown that the minimum turn-on delay time is about 6 ns at a control current amplitude of 60 mA. The possibility of generating current pulses with a duration of 53–154 ns and amplitudes of 38–130 A was demonstrated when the capacitor values were changed in the range of 56–1000nF.

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Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures

Сліпченко

Podoskin

Soboleva

et al. 2017

Journal of Applied Physics

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The effect of a local current turn-on in the heterostructure plane has been observed for low-voltage lasers-thyristors. It was shown that the spatial dynamics of the current-turn-on region is determined by the blocking voltage and the control current amplitude. For the first mode (blocking voltages up to 15 V), the current nonuniformity in the heterostructure plane is determined by the flux distribution of the spontaneous emission from the active region in the laser part to the side of the p-base of the phototransistor part of the heterostructure. The transition to the second mode (blocking voltages exceeding 15 V) is due to the sharp rise in the generation rate of excess carriers in the p-base of the phototransistor part of the heterostructure. In this case, the size of the region in which the original current turn-on occurs decreases to 70 μm. It was found that the rate at which the current-turn-on region expands depends on the working conditions of the laser part of the laser-thyristor and is 50 and 20 μm/ns for the spontaneous generation and lasing modes, respectively. It was also found that the spatial dynamics of the current determines the spatial dynamics of the laser light turn-on in the lateral waveguide and the emission efficiency in generation of short (<10 ns) laser pulses. It was demonstrated that, at low control currents, the main contribution to the decrease in the emission efficiency is made by the residual optical loss in the turned-off part of the laser-thyristor. At higher amplitudes of the control current, the emission efficiency grows due to the decrease in the residual loss in the turned-off part of the laser-thyristor, which made it possible to raise the peak power to 47 W for 100-ns laser pulses.

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Generation of Laser Pulses in the Megahertz Range of Repetition Frequencies by Low-Voltage AlGaAs/GaAs Laser-Thyristors

Cited by 9 publications

References 12 publications

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Turn-on dynamics and control efficiency of low-voltage AlGaAs/GaAs/InGaAs lasers-thyristors (905 nm) under optical activation of p-GaAs base with external light (1068 nm)

Низковольтные гетеротиристоры InP для генерации импульсов тока длительностью 50-150 ns

Effect of the spatial current dynamics on radiative characteristics of high-power lasers-thyristors based on AlGaAs/GaAs heterostructures

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