2013
DOI: 10.1063/1.4794858
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Generation of high-voltage pulses with subnanosecond front rise times in open discharge

Abstract: The investigation results for plasma switching devices of high-voltage pulses with pulse rise times less than 1 ns are presented. The approach is based on using conditions suitable for bringing a gas discharge chamber in a state with high conductivity due to generation of an electron beam owing to photoelectron emission from the device cathode. It is shown that in co-axial geometry pulses, switching time 0.45 ns on an active load RL = 50 Ω at voltage U = 20 kV can be achieved. It is shown with the method of do… Show more

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Cited by 18 publications
(28 citation statements)
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“…[9,15,16] the results of kinetic simulation of electron avalanche evolution for the experimental conditions [2,7] were presented. As was shown in [15], the secondary electron emission (SEE) becomes a dominant process in current growth at the final stage of breakdown.…”
Section: -3mentioning
confidence: 99%
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“…[9,15,16] the results of kinetic simulation of electron avalanche evolution for the experimental conditions [2,7] were presented. As was shown in [15], the secondary electron emission (SEE) becomes a dominant process in current growth at the final stage of breakdown.…”
Section: -3mentioning
confidence: 99%
“…The discharge operates between two paralel plane cathodes 6 mm apart and a mesh anode with 90% transparency placed in the middle between them. Applying high voltage leads to the generation of electron beam from the cathodes with the current density of 200÷400 A/cm 2 and current increase rate of 500 A/(cm 2 ns). Such type of discharges with unique parameters can be used as a source of electron beams or as subnanosecond high-power switches.…”
Section: Introductionmentioning
confidence: 99%
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