1993
DOI: 10.1364/ol.18.000290
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Generation of high-power sub-single-cycle 500-fs electromagnetic pulses

Abstract: We have generated sub-single-cycle pulses of electromagnetic radiation with pulse energies as high as 0.8 ,tJ and pulse lengths < 500 fs. The 10-dB width of the spectrum is 1.5 THz. The transmitter is a GaAs wafer illuminated at normal incidence by 120-fs, 770-nm pulses from a Ti:sapphire chirped-pulse amplifier system while a pulsed electric field is applied across the surface. The pulse energy of the far-infrared radiation is found to be a quadratic function of bias field and a nonmonotonic function of laser… Show more

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Cited by 389 publications
(250 citation statements)
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References 19 publications
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“…The use of an amplified femtosecond laser system allows the same generation principle described earlier to be scaled up through enlarging the photoconductive antenna gap to a dimension on the order of 1 cm and increasing the bias voltage to several kV. In an early demonstration of this technique, You et al have achieved 0.8 µJ THz pulse energies at 10 Hz repetition rate using semi-insulating GaAs wafers with silver paint electrodes and pulsed bias voltages applied by a spark plug [30]. The maximum THz energies were achieved with an external bias field of 10.7 kV/cm and laser fluencies of 0.1 mJ/cm 2 .…”
Section: 4high Field Pulses Using Large Area Emittersmentioning
confidence: 99%
See 1 more Smart Citation
“…The use of an amplified femtosecond laser system allows the same generation principle described earlier to be scaled up through enlarging the photoconductive antenna gap to a dimension on the order of 1 cm and increasing the bias voltage to several kV. In an early demonstration of this technique, You et al have achieved 0.8 µJ THz pulse energies at 10 Hz repetition rate using semi-insulating GaAs wafers with silver paint electrodes and pulsed bias voltages applied by a spark plug [30]. The maximum THz energies were achieved with an external bias field of 10.7 kV/cm and laser fluencies of 0.1 mJ/cm 2 .…”
Section: 4high Field Pulses Using Large Area Emittersmentioning
confidence: 99%
“…We will first discuss Tz pulse generation using photoconductive switches. Historically, this method was the first one to achieve single-cycle THz pulses with µJ-level pulse energies from an amplified femtosecond laser source [30]. An overview over broadband THz generation using gas plasmas will be given in Section 3.…”
Section: Introductionmentioning
confidence: 99%
“…The upper plate contains a hole covered by a grid. After interaction with the THz half-cycle pulses, which are produced in a biased large-aperture GaAs antenna illuminated by 800 nm, 100 fs pulses from a regeneratively amplified Ti:sapphire laser system [12], the Rydberg population is probed by state-selective field ionization (SFI). To that end, a slow voltage ramp is applied to the lower capacitor plate.…”
Section: (C)mentioning
confidence: 99%
“…With low repetition rate (10 -1000 Hz) ultrafast laser systems, far-IR pulses with energies as high as 1 µJ have been generated. 65 An external bias field is not strictly necessary for photoconductive generation of terahertz pulses, as real carriers generated by a visible laser pulse can be accelerated in the field of the depletion layer of the semiconductor. This surface field will accelerate the carriers perpendicular to the surface of the semiconductor and hence the terahertz oscillating dipole will be perpendicular to the surface.…”
Section: Terahertz-pulse Generation and Detectionmentioning
confidence: 99%