Generation of dense electron-hole plasmas in silicon

Sokolowski‐Tinten, K.; Linde, D. von der

doi:10.1103/physrevb.61.2643

Cited by 501 publications

(403 citation statements)

References 60 publications

(55 reference statements)

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“…The green filled circle with dotted line is the effective mass and damping time adopted in Ref. 21 , m * = 0.18m and τ = 1 fs. The blue filled circle with dashed line is the parameters adopted in Ref.…”

Section: B Excitation In Surface Layermentioning

confidence: 99%

“…For example, in Ref. 21 and 33 , the response of electrons excited in conduction band is described with the Drude model. We consider the following simplified form for the …”

Section: B Excitation In Surface Layermentioning

confidence: 99%

“…Experimentally, electron-hole plasmas are generated by irradiating solids with strong laser pulses, and the threshold for dielectric breakdown has been measured [18][19][20][21][22][23][24][25][26][27] . To describe the phenomena, model approaches such as a rate equation for electronic excitations have been developed [28][29][30][31][32][33] .…”

mentioning

confidence: 99%

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Time-dependent density functional theory for strong electromagnetic fields in crystalline solids

et al. 2012

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We apply the coupled dynamics of time-dependent density functional theory and Maxwell equations to the interaction of intense laser pulses with crystalline silicon. As a function of electromagnetic field intensity, we see several regions in the response. At the lowest intensities, the pulse is reflected and transmitted in accord with the dielectric response, and the characteristics of the energy deposition is consistent with two-photon absorption. The absorption process begins to deviate from that at laser intensities ∼ 10 13 W/cm 2 , where the energy deposited is of the order of 1 eV per atom. Changes in the reflectivity are seen as a function of intensity. When it passes a threshold of about 3 × 10 12 W/cm 2 , there is a small decrease. At higher intensities, above 2 × 10 13 W/cm 2 , the reflectivity increases strongly. This behavior can be understood qualitatively in a model treating the excited electron-hole pairs as a plasma.

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Section: B Excitation In Surface Layermentioning

confidence: 99%

“…For example, in Ref. 21 and 33 , the response of electrons excited in conduction band is described with the Drude model. We consider the following simplified form for the …”

Section: B Excitation In Surface Layermentioning

confidence: 99%

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Time-dependent density functional theory for strong electromagnetic fields in crystalline solids

et al. 2012

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“…Due to these secondary processes, each photon excites about N e/ph = 15 electrons (cf figure 5, where the primary excited electrons create around ten secondary electrons by impact ionization and four secondary electrons by Auger-like transitions). Experimentally, the transient electronic density can be measured on a femtosecond timescale: for instance, by measuring the reflectivity with a pump-probe technique [13].…”

Section: Energy and Density Of Excited Electronsmentioning

confidence: 99%

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Medvedev¹,

Rethfeld²

2010

New J. Phys.

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Abstract. The irradiation of semiconductors with ultrashort laser pulses causes excitation of electrons from bound states (the valence band and deep atomic shells) to the conduction band, which produces non-equilibrium highly energetic free electrons. We apply a Monte-Carlo simulation technique to study the ionization and excitation of the electronic subsystem of a solid silicon target irradiated with a femtosecond laser pulse, obtaining the transient distribution of electrons within the conduction band. We take into account the electronic band structure and Pauli's principle for excited electrons. Secondary excitation and ionization processes induced by electrons in the conduction band and holes in the valence band were also included and simulated event by event. The temporal distributions of the density and the energy of excited electrons are calculated and discussed. We demonstrate that, due to the energy used to overcome the ionization potential, the final kinetic energy of the free electrons is significantly less than the total energy provided by the laser pulse. We extend the concept of an 'effective energy gap' for multiple electronic excitations, which can be applied to estimate the free-electron density after high-intensity vacuum ultraviolet (VUV) laser pulse irradiation. The effective energy gap depends on both the properties of the material and the laser pulse parameters. The concept provides a fundamental understanding of the experimentally accessible pair creation energy measured in the limit of long times.

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“…[1][2][3] Laser-induced heating, 4 melting, 5 laser ablation, 6 shock wave dynamics, 7 Coulomb explosions, 8 and plasma formation 9 are typical examples. Lasermaterial interactions are heavily dependent on laser beam parameters such as pulse duration, intensity, and wavelength, as well as on material properties such as the band gap for semiconductors and dielectrics.…”

Section: Introductionmentioning

confidence: 99%

Multiphoton absorption in germanium using pulsed infrared free-electron laser radiation

et al. 2011

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We report wavelength-and intensity-dependent transmission measurements of intense mid-infrared radiation from the Vanderbilt Free Electron Laser in single-crystal Ge(100) in the wavelength range of 2.8-5.2 μm. This range accesses both the direct and indirect energy gaps in Ge, requiring in each case either two or three photons (2PA or 3PA) for absorption. Large changes in the multi-photon absorption rate are seen at the direct-to-indirect and 2PA-to-3PA transitions. Photon interactions are dominated by free carrier absorption (FCA), primarily due to holes. The entire absorption process is modeled with the two-and three-photon absorption coefficients (β and γ) as fitting parameters.Using newly measured values of the low-intensity FCA cross-sections, we find a best fit to the data at 2.8 µm that is in agreement with theory and previous measurements. We report a ratio of 175 for β across the direct-to-indirect transition, and a ratio of 5 across the same transition for γ. These ratios are independent of systematic variations in free carrier cross-sections and beam diameter. Receipt

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Generation of dense electron-hole plasmas in silicon

Cited by 501 publications

References 60 publications

Time-dependent density functional theory for strong electromagnetic fields in crystalline solids

Time-dependent density functional theory for strong electromagnetic fields in crystalline solids

Transient dynamics of the electronic subsystem of semiconductors irradiated with an ultrashort vacuum ultraviolet laser pulse

Multiphoton absorption in germanium using pulsed infrared free-electron laser radiation

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