Generation of 320 mW at 10.20 μm based on CdSe long-wave infrared crystal

Large-size high-quality CdSe-OPO component for far IR laser output prepared by directional crystal growth technique

“…In 2018, Wang et al reported a 320 mW 10.20 μm CdSe SR-OPO using a 6 × 10 × 44 mm 3 crystal. 17 In 2020, up to 1.05 W output power was achieved at 10.1 μm from a CdSe SR-OPO with Cr 2+ :ZnSe@2.6 μm seed-injection and intracavity beam expansion. 18 A seed-injected CdSe idler-resonant OPO (IR-OPO) was used to ensure high efficiency and high beam quality of output at 11.01 μm with an average power of 802 mW.…”

Preparation and characterization of quarter-wave plate at 12.4 μm based on CdSe single crystal

“…[15,16]. Compared with those mid-infrared materials, CdSe single crystal could meet the demand of birefringence wave plate better benefiting from its' wide infrared transparent band (0.750∼25 μm), high infrared transmittance and appropriate birefringence coefficient (∆n 0.017 = ) [15,[17][18][19][20], It is an excellent material for the preparation of mid-infrared polarization wave plates. Despite all these advantages, however, large size and high quality CdSe single crystal is also difficulty to obtain, therefore, the large size and high quality crystal growth method is strongly desired.…”